{
  "abstract": "(AlxGa1-x)2O3/beta-Ga2O3 transistors are an emerging candidate for high-power and high-frequency electronic devices. beta-Ga2O3 in particular is notably limited for anisotropic low thermal conductivity, which is further reduced in (AlxGa1-x)2O3 due to alloy and other defect-driven phonon scattering mechanisms. In this work we show that the thermal conductivity of (010) oriented (AlxGa1-x)2O3 thin films for 0.01 < x < 0.20, measured using time-domain thermoreflectance (TDTR), is limited by alloy scattering without observable adverse scattering by additional defects. This is enabled through the synthesis of the (AlxGa1-x)2O3 films using molecular beam epitaxy (MBE) on \\b{eta}-Ga2O3 substrates, leveraging indium-catalyzed growth to suppress dislocation formation and phase separation to achieve single-phase pseudomorphic films up to x = 0.2. This growth process improved the thermal conductivity of (AlxGa1-x)2O3 by 2X as compared to previously reported values. For increasing Al composition (x), we observe a steady decline in (AlxGa1-x)2O3 thermal conductivity due to alloy scattering which is validated using virtual crystal approximation (VCA) model. We also show that the thermal boundary conductance across the Al/(AlxGa1-x)2O3 interface is reduced with increasing x, which we posit is due to the stiffening of the (AlxGa1-x)2O3 acoustic modes with increasing x by comparing experimental results with a diffuse mismatch model (DMM). Overall, these thermal characteristics provide valuable insights for designing heterostructures with optimized interfaces and composition.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.24081",
  "author_total": 6,
  "authors": [
    {
      "name": "Shivashree Gowda"
    },
    {
      "name": "Stephen Schaefer"
    },
    {
      "name": "Ethan A. Scott"
    },
    {
      "name": "Samreen Khan"
    },
    {
      "name": "Patrick E. Hopkins"
    },
    {
      "name": "M. Brooks Tellekamp"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/01efcx39znahh.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.24081",
  "fulltext_url": null,
  "id": "01efcx39znahh",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.24081",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2504|Ga2O3 and related materials"
    ]
  ],
  "openalex": "W7214042704",
  "pdf_url": "https://arxiv.org/pdf/2609.24081",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-21",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/01efcx39znahh.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:23:19Z",
      "native_id": "2609.24081",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.24081"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Enhanced thermal conductivity of (010) (AlxGa1-x)2O3 epitaxial films utilizing indium-catalyzed molecular beam epitaxy",
  "title_text": "Enhanced thermal conductivity of (010) (AlxGa1-x)2O3 epitaxial films utilizing indium-catalyzed molecular beam epitaxy",
  "type": "preprint",
  "updated_at": "2026-10-30T12:23:19Z",
  "url": "https://research.draconitic.com/paper/01efcx39znahh",
  "venue": "arXiv",
  "versions": []
}