{
  "abstract": "Direct-write pattering, using chemical vapor deposition through a nozzle, enables localized film growth using high-purity precursors standard to the electronics industry. Yet, achieving sub 100 $μ\\mathrm{m}$ feature control has been limited by nozzle design and unquantified precursor surface diffusion. Here, we report a direct-write chemical vapor deposition platform that employs a 10 $μ\\mathrm{m}$ tip diameter glass micro-nozzle mounted on a scanning stage above a heated substrate in ultra-high vacuum. Using this approach, we demonstrate the continuous single-pass writing of 500 $\\mathrm{nm}$ thick metallic aluminum lines with a 30 $μ\\mathrm{m}$ linewidth on titanium nitride-coated silicon. This capability enables maskless, localized growth under systematically varied deposition conditions on a single substrate. To analyze the resulting deposit profiles, we introduce a transport framework coupling Knudsen gas emission from the micro-nozzle with surface diffusion to extract the effective precursor diffusion length, $L_d$. $L_d$ captures the combined impact of precursor surface mobility, residence time, substrate temperature ($165^{\\circ}\\mathrm{C}$ to $205^{\\circ}\\mathrm{C}$), growth duration, and nozzle height, contracting from 17.4 $μ\\mathrm{m}$ down to 3.2 $μ\\mathrm{m}$ at elevated temperatures. These results establish $L_d$ as a quantitative parameter for evaluating laterally confined chemical vapor growth and predicting feature resolution limits. This approach provides a practical methodology to measure and quantify precursor surface transport in localized film synthesis.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.07113",
  "author_total": 5,
  "authors": [
    {
      "name": "Eeshan Ketkar"
    },
    {
      "name": "Swarnabha Chattaraj"
    },
    {
      "name": "Koichi Tanaka"
    },
    {
      "name": "Samy Kouidri"
    },
    {
      "name": "Supratik Guha"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/08ndyjtjr72gm.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.07113",
  "fulltext_url": null,
  "id": "08ndyjtjr72gm",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.07113",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.chem-ph"
    ],
    [
      "openalex",
      "2208|Advancements in Photolithography Techniques"
    ]
  ],
  "openalex": "W7220910653",
  "pdf_url": "https://arxiv.org/pdf/2610.07113",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-05",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/08ndyjtjr72gm.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:27:22Z",
      "native_id": "2610.07113",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.07113"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "arxiv:physics.chem-ph",
      "subfield": "physical"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Direct-Write Chemical Vapor Deposition",
  "title_text": "Direct-Write Chemical Vapor Deposition",
  "type": "preprint",
  "updated_at": "2026-10-30T12:27:22Z",
  "url": "https://research.draconitic.com/paper/08ndyjtjr72gm",
  "venue": "arXiv",
  "versions": []
}