{
  "abstract": "Ferroelectric memories based on the wurtzite-structured ferroelectrics are projected to store information for more than 3 million years at 150C. These results are extracted by combining standard domain wall motion limited switching kinetics with the near-by-electrode injection model for opposite state retention in ferroelectric random access memory. This impressive performance is greatly aided by switching only a fraction of the total polarization to store data, in order to limit the initial imprint variation of the devices - an effect that is universally observed in films with different thicknesses (60 nm - 270 nm) and different compounds (AlScN and AlScBN). Paradoxically, yet systematically, this reduction in initial imprint consistently results in larger switching polarization after a given time, compared to the fully switching state and 5-7 orders of magnitude improved opposite state retention. Finally, partial switching is able to simultaneously boost endurance against premature polarization loss and breakdown, making it a promising strategy for improved operation of ferroelectric devices with large spontaneous polarization, in particularly wurtzite-structured compounds.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2607.16665",
  "author_total": 6,
  "authors": [
    {
      "name": "Maike Gremmel"
    },
    {
      "name": "Roberto Guido"
    },
    {
      "name": "Victor Witte"
    },
    {
      "name": "Thomas Mikolajick"
    },
    {
      "name": "Uwe Schröder"
    },
    {
      "name": "Simon Fichtner"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/092zbmrgb99ht.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2607.16665",
  "fulltext_url": null,
  "id": "092zbmrgb99ht",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2607.16665",
  "language": null,
  "licence": "CC-BY-NC-ND-4.0",
  "licence_label": "CC BY-NC-ND 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by-nc-nd/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2208|Ferroelectric and Negative Capacitance Devices"
    ]
  ],
  "openalex": "W7169869080",
  "pdf_url": "https://arxiv.org/pdf/2607.16665",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-08",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/092zbmrgb99ht.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:19:48Z",
      "native_id": "2607.16665",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2607.16665"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Three Million Years Opposite State Data Retention in Partially Switched Wurtzite Ferroelectrics",
  "title_text": "Three Million Years Opposite State Data Retention in Partially Switched Wurtzite Ferroelectrics",
  "type": "preprint",
  "updated_at": "2026-10-30T12:19:48Z",
  "url": "https://research.draconitic.com/paper/092zbmrgb99ht",
  "venue": "arXiv",
  "versions": []
}