{
  "abstract": "Hydrogen often exhibits amphoteric behavior in semiconductors, but its role is in n-type InN remains unresolved. Wurtzite InN is a narrow-gap semiconductor with high electron mobility and is therefore attractive for high-speed electronics and optoelectronic applications. Here we use hard x-ray photoemission spectroscopy (HAXPES) to probe hydrogen-related electronic structure in as-grown and post-annealed InN thin films prepared at different grown temperatures. Post annealing, which reduces the concentration of hydrogen impurities in the films, shifts the core-level spectra toward lower binding energy, consistent with a chemical-potential shift associated with the passivation of electron carriers. In the valence-band spectra, an acceptor-like in-gap feature near the valence-band maximum is suppressed after annealing. Together with the established donor-like behavior of hydrogen in InN, these results suggest that acceptor H- states coexist with donor H+ states in InN. The coexistence of these opposite hydrogen charge states provides a microscopic picture of hydrogen-driven compensation in InN and highlights the amphoteric nature of hydrogen even in a highly n-type semiconductor.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2606.17401",
  "author_total": 4,
  "authors": [
    {
      "name": "Masaki Kobayashi"
    },
    {
      "name": "Yudai Yamashita"
    },
    {
      "name": "Kazuyuki Hirama"
    },
    {
      "name": "Yoshitaka Taniyasu"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/0fv66drqxn13n.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2606.17401",
  "fulltext_url": null,
  "id": "0fv66drqxn13n",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2606.17401",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2606.17401",
  "pmcid": null,
  "pmid": null,
  "published": "2026-11-05",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/0fv66drqxn13n.ris",
  "sources": [
    {
      "first_seen": "2026-11-06T18:21:30Z",
      "native_id": "2606.17401",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2606.17401"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Coexistence of Donor and Acceptor Hydrogen States in n-Type InN",
  "title_text": "Coexistence of Donor and Acceptor Hydrogen States in n-Type InN",
  "type": "preprint",
  "updated_at": "2026-11-09T00:20:33Z",
  "url": "https://research.draconitic.com/paper/0fv66drqxn13n",
  "venue": "arXiv",
  "versions": []
}