{
  "abstract": "Reducing disorder in undoped Si/SiGe field-effect heterostructures remains an important materials challenge for scalable quantum devices, particularly electron spin qubits. Background impurities such as oxygen have been identified as mobility-limiting, yet practical heterostructure-design strategies for suppressing their incorporation remain underexplored, and their influence across different transport regimes is not fully established. Here, we demonstrate a simple route to oxygen reduction and mobility enhancement in Si/SiGe quantum-well heterostructures grown by reduced-pressure chemical vapor deposition (RP-CVD) on 200 mm Si(100) substrates through the introduction of a thin, electrically passive buried Si layer within the lower SiGe barrier. Secondary-ion mass spectrometry shows that the buried Si layer reproducibly reduces the oxygen background in the subsequently grown SiGe by approximately a factor of five, without modifying the active quantum-well region. Density- and temperature-dependent magnetotransport measurements further show that this reduction increases the electron mobility, while leaving the percolation density and density-dependent mobility scaling largely unchanged. Upon cooling to 0.3 K, both high- and low-oxygen devices exhibit similar density-dependent fractional mobility enhancements, indicating that the reduced oxygen background improves momentum relaxation without substantially altering the dominant low-density disorder landscape. These results establish the buried Si layer as a straightforward and process-compatible heterostructure-design element for reducing oxygen incorporation and improving transport in 200 mm CVD-grown Si/SiGe quantum-device materials.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2608.27377",
  "author_total": 7,
  "authors": [
    {
      "name": "Felix Reichmann"
    },
    {
      "name": "Alberto Mistroni"
    },
    {
      "name": "Fabian Fidorra"
    },
    {
      "name": "Giovanni Capellini"
    },
    {
      "name": "Yuji Yamamoto"
    },
    {
      "name": "Marco Lisker"
    },
    {
      "name": "Marvin H. Zoellner"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/0h3368nr1vc96.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2608.27377",
  "fulltext_url": null,
  "id": "0h3368nr1vc96",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2608.27377",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "openalex",
      "3107|Quantum and electron transport phenomena"
    ]
  ],
  "openalex": "W7204579672",
  "pdf_url": "https://arxiv.org/pdf/2608.27377",
  "pmcid": null,
  "pmid": null,
  "published": "2026-08-29",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/0h3368nr1vc96.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:41Z",
      "native_id": "2608.27377",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2608.27377"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities",
  "title_text": "Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities",
  "type": "preprint",
  "updated_at": "2026-10-30T12:17:41Z",
  "url": "https://research.draconitic.com/paper/0h3368nr1vc96",
  "venue": "arXiv",
  "versions": []
}