{
  "abstract": "A cleanroom‐free process was developed for the fabrication of ultralow‐power resistive switching devices. Sub‐micron‐thick silver (Ag) electrodes are printed by XTPL's Ultraprecise Dispensing technology in a fully additive process. Two‐layer molybdenum disulfide (MoS 2 ) is used as the active layer, which was prepared and deposited by the Langmuir‐Schaefer technique. Devices with 30 × 30 µm 2 with volatile and non‐volatile operation were produced. These exhibit SET and RESET voltages of 0.32 ± 0.09 V and −0.29 ± 0.09 V, respectively, a memory window up to 10 6 , an endurance of 300 cycles achieved by voltage sweep, and stable operation under vacuum. The devices can retain the state for over 10 5 s. By employing high‐resolution printing techniques and an ultra‐conformable liquid‐based two‐dimensional materials deposition process, cost‐efficient and high‐performance resistive switching devices were fabricated for next‐generation computation and communication.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 14,
  "authors": [
    {
      "name": "Miguel Franco"
    },
    {
      "name": "Daniel Neves"
    },
    {
      "name": "Dorina Papanastasiou"
    },
    {
      "name": "Jonas Deuermeier"
    },
    {
      "name": "Tomás Calmeiro"
    },
    {
      "name": "Tomás Mingates"
    },
    {
      "name": "Adam Kelly"
    },
    {
      "name": "Joseph Neilson"
    },
    {
      "name": "Eugénie Martinez"
    },
    {
      "name": "Zdeněk Sofer"
    },
    {
      "name": "Elvira Fortunato"
    },
    {
      "name": "Rodrigo Martins"
    },
    {
      "name": "Emanuel Carlos"
    },
    {
      "name": "Asal Kiazadeh"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/0pedg477v4rbc.bib",
  "cited_by": 0,
  "doi": "10.1002/aelm.70582",
  "fulltext_url": null,
  "id": "0pedg477v4rbc",
  "issns": [
    "2199-160X",
    "2199-160X"
  ],
  "landing_url": "https://hal.science/hal-05799025v1",
  "language": "en",
  "licence": "CC-BY",
  "licence_label": "CC BY",
  "licence_source": "journal",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.chim"
    ],
    [
      "hal",
      "1.chim.mate"
    ],
    [
      "openalex",
      "2208|Advanced Memory and Neural Computing"
    ]
  ],
  "openalex": "W7221624684",
  "pdf_url": "https://onlinelibrary.wiley.com/doi/pdfdirect/10.1002/aelm.70582",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-12",
  "publisher": "Wiley",
  "ris": "https://research.draconitic.com/paper/0pedg477v4rbc.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:56Z",
      "native_id": "hal-05799025",
      "source": "hal",
      "url": "https://hal.science/hal-05799025v1"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "hal:1.chim.mate",
      "subfield": "materials-polymers"
    }
  ],
  "title": "MoS 2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing",
  "title_text": "MoS 2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:56Z",
  "url": "https://research.draconitic.com/paper/0pedg477v4rbc",
  "venue": "Advanced Electronic Materials",
  "versions": []
}