{
  "abstract": "Wide and ultrawide bandgap semiconductors present novel opportunities for advancing power electronics, particularly in domains where high-voltage operation and elevated temperature stability are required. In this context, AlGaN/AlGaN heterostructures emerge as promising candidates due to their better intrinsic material properties compared to AlGaN/GaN heterostructures. Furthermore, the tunability of the aluminum molar fraction within AlGaN provides more possibilities for semiconductor engineering. This investigation focuses on evaluating the temperature operation of AlGaN channel high-electron mobility transistors grown on silicon substrates with different aluminum contents. The objective is to assess the thermal reliability of these devices for high-temperature power applications. The results highlight the low off-state current density, a more abrupt subthreshold slope, and a reduction in the temperature-induced decrease in on-state current density in Al-rich AlGaN channel high-electron mobility transistors grown on silicon substrates, positioning them as a promising solution for high-temperature power electronics.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 9,
  "authors": [
    {
      "name": "Julien Bassaler"
    },
    {
      "name": "Jash Mehta"
    },
    {
      "name": "Stéphanie Rennesson"
    },
    {
      "name": "Fabrice Semond"
    },
    {
      "name": "Sylvie Contreras"
    },
    {
      "name": "Julien Pernot"
    },
    {
      "name": "Yvon Cordier"
    },
    {
      "name": "Farid Medjdoub"
    },
    {
      "name": "Philippe Ferrandis"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/11n7hbns7eae9.bib",
  "cited_by": 0,
  "doi": "10.1063/5.0326014",
  "fulltext_url": null,
  "id": "11n7hbns7eae9",
  "issns": [
    "0003-6951",
    "1077-3118"
  ],
  "landing_url": "https://hal.science/hal-05742914v1",
  "language": "en",
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.phys"
    ],
    [
      "hal",
      "0.spi"
    ],
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7204437069",
  "pdf_url": "https://hal.science/hal-05742914/document",
  "pmcid": null,
  "pmid": null,
  "published": "2026-08-27",
  "publisher": "American Institute of Physics",
  "ris": "https://research.draconitic.com/paper/11n7hbns7eae9.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:46Z",
      "native_id": "hal-05742914",
      "source": "hal",
      "url": "https://hal.science/hal-05742914v1"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "openalex:3104|GaN-based semiconductor devices and materials",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Assessment of AlGaN channel high-electron mobility transistors on silicon for high-temperature power electronics",
  "title_text": "Assessment of AlGaN channel high-electron mobility transistors on silicon for high-temperature power electronics",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:46Z",
  "url": "https://research.draconitic.com/paper/11n7hbns7eae9",
  "venue": "Applied Physics Letters",
  "versions": []
}