{
  "abstract": "Silicon T centers are promising spin-photon interfaces in solid-state platforms for telecom-compatible, scalable quantum information technologies. A major challenge for T centers in nanophotonics is spectral diffusion, where fluctuations in the local electric-field environment from surface and bulk charge states broaden the optical transition and reduce photon indistinguishability. Strategies that directly suppress spectral diffusion are therefore critical for improving T-center-based quantum photonic devices. Here, we use atomic-layer-deposited Al2O3 to passivate the silicon surface and demonstrate a systematic narrowing of T center optical linewidths. Across our measurements, Al2O3 passivation reduces the T center emission linewidth by up to 57%. Complementary above-bandgap illumination and spectral hole burning measurements show that the remaining linewidth contains a significant spectral-diffusion component caused by adjacent charge traps, while placing an upper bound of approximately 75 MHz on the homogeneous linewidth. This work provides a CMOS-compatible path toward generating indistinguishable photons from silicon T centers for scalable quantum photonic applications.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2608.09904",
  "author_total": 7,
  "authors": [
    {
      "name": "Fariba Islam"
    },
    {
      "name": "Chang-Min Lee"
    },
    {
      "name": "Kyu-Young Kim"
    },
    {
      "name": "Sorah Fischer"
    },
    {
      "name": "Purbita Purkayastha"
    },
    {
      "name": "Amirehsan Alizadehherfati"
    },
    {
      "name": "Edo Waks"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/1cstypmwbte2p.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2608.09904",
  "fulltext_url": null,
  "id": "1cstypmwbte2p",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2608.09904",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "physics.optics"
    ],
    [
      "arxiv",
      "quant-ph"
    ],
    [
      "openalex",
      "2505|Diamond and Carbon-based Materials Research"
    ]
  ],
  "openalex": "W7202201664",
  "pdf_url": "https://arxiv.org/pdf/2608.09904",
  "pmcid": null,
  "pmid": null,
  "published": "2026-08-31",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/1cstypmwbte2p.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:41Z",
      "native_id": "2608.09904",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2608.09904"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.optics",
      "subfield": "optics-photonics"
    },
    {
      "field": "physics",
      "origin": "arxiv:quant-ph",
      "subfield": "quantum"
    }
  ],
  "title": "Surface passivation for narrowing optical linewidth of silicon T centers in nanophotonic devices",
  "title_text": "Surface passivation for narrowing optical linewidth of silicon T centers in nanophotonic devices",
  "type": "preprint",
  "updated_at": "2026-10-30T12:17:41Z",
  "url": "https://research.draconitic.com/paper/1cstypmwbte2p",
  "venue": "arXiv",
  "versions": []
}