{
  "abstract": "Room-temperature single-phase multiferroics exhibiting coupled ferroelectric and magnetic order are promising candidates for next-generation magnetoelectric memory and spintronic technologies. Here, we report the growth of approximately 100.6 nm thick polycrystalline orthorhombic GaFeO3 thin films on fluorine-doped tin oxide-coated glass (FTO) substrates by pulsed laser deposition. Core-level X-ray photoelectron spectroscopy reveals a reduced Fe2+ concentration and suppressed oxygen-vacancy formation, contributing to reduced leakage current and improved ferroelectric characteristics. The films exhibit robust ferrimagnetism and ferroelectricity at room temperature, confirming the coexistence of ferroic orders within a single phase. Piezoresponse Force Microscopy further demonstrates reversible local polarization switching, accompanied by an asymmetric butterfly loop with coercive voltages of -0.31 V and +1.07 V. The films also exhibit a high relative dielectric constant of approximately 1700 with a relatively low dielectric loss tangent of approximately 2.83 at 1 MHz. Moreover, a significant magnetodielectric coefficient of approximately 2.3% is observed under a relatively small magnetic field of only 0.1 kOe, highlighting strong magnetoelectric coupling. These results establish GaFeO3 thin films as a promising platform for room-temperature multifunctional devices, mainly low-field magnetoelectric memory and spintronic architectures.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.39696",
  "author_total": 4,
  "authors": [
    {
      "name": "Ishita Jana"
    },
    {
      "name": "Sourav Sarkar"
    },
    {
      "name": "Soham Saha"
    },
    {
      "name": "Kalyan Mandal"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/1gcq1r1jdnmcj.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.39696",
  "fulltext_url": null,
  "id": "1gcq1r1jdnmcj",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.39696",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2610.39696",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-29",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/1gcq1r1jdnmcj.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:36:23Z",
      "native_id": "2610.39696",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.39696"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Pulse Laser Deposited GaFeO3 Thin Film Grown on FTO: Correlated Ferroic Orders and Strong Magnetodielectric Coupling at Room Temperature",
  "title_text": "Pulse Laser Deposited GaFeO3 Thin Film Grown on FTO: Correlated Ferroic Orders and Strong Magnetodielectric Coupling at Room Temperature",
  "type": "preprint",
  "updated_at": "2026-11-01T12:20:45Z",
  "url": "https://research.draconitic.com/paper/1gcq1r1jdnmcj",
  "venue": "arXiv",
  "versions": []
}