{
  "abstract": "Spin–orbit torque (SOT) enables ultrafast, energy-efficient magnetization switching, making it promising for MRAM cache applications. However, current SOT-MRAM devices face write efficiency limitations, with charge-to-spin conversion (ξDL) reaching only ∼ 45%, well below the projected ∼80% required for advanced transistor nodes. Recent advances in orbital current physics offer a route to enhance ξDL. Here, we study the Ta(3–30 nm)/W(1–4 nm) system, revealing a large additional torque contribution from Ta, a 4-fold increase over the spin Hall effect in Ta alone, attributed to the orbital physics. This system exhibits larger ξDL than W-based SOT systems, while maintaining robust perpendicular magnetic anisotropy and 400 °C annealing compatibility. We integrate the Ta/W system into 3-terminal SOT-MTJ devices, demonstrating performance comparable to W-based systems. Our results show that orbital physics offers a viable strategy to enhance SOT-MRAM efficiency. We further propose and demonstrate proof-of-concept vertical nonlocal switching using orbital torques, simplifying bottom-pinned SOT-MRAM fabrication.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2605.27215",
  "author_total": 9,
  "authors": [
    {
      "name": "Marco Biagi"
    },
    {
      "name": "Corrado Capriata"
    },
    {
      "name": "Corentin Bouchard"
    },
    {
      "name": "Subham Kintali Senapati"
    },
    {
      "name": "Ioannis Trikoilis Koll"
    },
    {
      "name": "Ricardo Sousa"
    },
    {
      "name": "Louis Hutin"
    },
    {
      "name": "Bernard Viala"
    },
    {
      "name": "Kevin Garello"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/1qks63pznmpxb.bib",
  "cited_by": 0,
  "doi": "10.1021/acs.nanolett.6c02672",
  "fulltext_url": null,
  "id": "1qks63pznmpxb",
  "issns": [
    "1530-6984",
    "1530-6992"
  ],
  "landing_url": "https://hal.science/hal-05763702v1",
  "language": "en",
  "licence": "CC-BY-NC-SA-4.0",
  "licence_label": "CC BY-NC-SA 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by-nc-sa/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.phys"
    ],
    [
      "hal",
      "0.spi"
    ],
    [
      "hal",
      "1.phys.cond"
    ],
    [
      "hal",
      "1.spi.nano"
    ],
    [
      "openalex",
      "3107|Magnetic properties of thin films"
    ]
  ],
  "openalex": "W7162537478",
  "pdf_url": "https://hal.science/hal-05763702/document",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-21",
  "publisher": "American Chemical Society",
  "ris": "https://research.draconitic.com/paper/1qks63pznmpxb.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:40Z",
      "native_id": "hal-05763702",
      "source": "hal",
      "url": "https://hal.science/hal-05763702v1"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "hal:1.phys.cond",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Orbital and Spin–Orbit Torque Interplay in Ta/W-Based Magnetic Tunnel Junctions with Vertical Nonlocal Switching",
  "title_text": "Orbital and Spin–Orbit Torque Interplay in Ta/W-Based Magnetic Tunnel Junctions with Vertical Nonlocal Switching",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:40Z",
  "url": "https://research.draconitic.com/paper/1qks63pznmpxb",
  "venue": "Nano Letters",
  "versions": []
}