{
  "abstract": "Si and Ge are technologically important semiconductors for electronic, photovoltaic, and optoelectronic applications. Herein, we report mixed-source hydride vapor phase epitaxial growth of (Ge, Si1–xGex)–AlN core–shell crystals on Al-based nanoabsorbers. Nano-CT and microscopy resolve hollow, partially filled, and filled morphologies that together support a Plateau–Rayleigh-instability-mediated shell-first model in which an Al-derived shell-like structure precedes filling by Ge-containing or Si–Ge-containing material. Electron microscopy, energy-dispersive X-ray spectroscopy, and Raman measurements provide complementary structural and compositional context, including local observations consistent with 2H-like Si domains. Four room-temperature photoluminescence spectra recorded under 532 nm excitation show telecom E-band features with sampled maxima at approximately 1371.9, 1377.0, 1381.1, and 1391.8 nm. Additional archived nominal-setting records for four spectral windows are presented as qualitative excitation-setting comparisons. Audited HSE Δ-self-consistent-field end points and PBE scaling calculations evaluate neutral CSi–Oi as a candidate model, while newly added formation, association, k-point, and cell-size sensitivity tests define the scope of that comparison. The optical data are therefore reported without a peak-specific microscopic or single-emitter assignment. The combined results establish the shell-first growth morphology and document room-temperature E-band photoluminescence in group-IV/III-nitride core–shell material.",
  "abstract_shown": true,
  "affiliations": [
    "Electronics and Telecommunications Research Institute (ETRI) , , ,",
    "LNBS Co., Ltd. , 270 Jungang-daero, Dong-gu , ,",
    "Kookmin University , , ,",
    "National Korea Maritime and Ocean University , , ,",
    "Nagoya University , , ,"
  ],
  "article_type": "research article",
  "arxiv": null,
  "author_total": 13,
  "authors": [
    {
      "affs": [
        0
      ],
      "name": "Sunghoon Choi",
      "orcid": "0000-0003-1714-5233"
    },
    {
      "affs": [
        1
      ],
      "name": "Kyoung Hwa Kim"
    },
    {
      "affs": [
        2
      ],
      "name": "Won Joon Bong"
    },
    {
      "affs": [
        2
      ],
      "name": "Jun-Seok Park"
    },
    {
      "affs": [
        3
      ],
      "name": "Eunmin Kwon"
    },
    {
      "affs": [
        3
      ],
      "name": "Sohee Kim"
    },
    {
      "affs": [
        3
      ],
      "name": "Myungjun Kim"
    },
    {
      "affs": [
        3
      ],
      "name": "Donghyeon Jeong"
    },
    {
      "affs": [
        1,
        3
      ],
      "name": "Jae Hak Lee"
    },
    {
      "affs": [
        4
      ],
      "name": "Takeshi Kato"
    },
    {
      "affs": [
        4
      ],
      "name": "Yoshio Honda"
    },
    {
      "affs": [
        4
      ],
      "name": "Anna Honda"
    },
    {
      "affs": [
        3
      ],
      "name": "Hyung Soo Ahn"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/287n2rhshnkrx.bib",
  "cited_by": 0,
  "doi": "10.1021/acsomega.6c06175",
  "fulltext_url": "https://europepmc.org/articles/PMC13688582",
  "id": "287n2rhshnkrx",
  "issns": [
    "2470-1343"
  ],
  "landing_url": "https://pubs.acs.org/acsodf/article/11/41/63138/5447088/Plateau-Rayleigh-Instability-Driven-Shell-First",
  "language": "eng",
  "licence": "CC-BY-NC-ND-4.0",
  "licence_label": "CC BY-NC-ND 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by-nc-nd/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7220895797",
  "pdf_url": "https://pubs.acs.org/doi/pdf/10.1021/acsomega.6c06175",
  "pmcid": "PMC13688582",
  "pmid": "42924042",
  "published": "2026-10-08",
  "publisher": "American Chemical Society (ACS)",
  "ris": "https://research.draconitic.com/paper/287n2rhshnkrx.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:18:39Z",
      "native_id": "10.1021/acsomega.6c06175",
      "source": "crossref",
      "url": "https://pubs.acs.org/acsodf/article/11/41/63138/5447088/Plateau-Rayleigh-Instability-Driven-Shell-First"
    },
    {
      "first_seen": "2026-10-30T12:20:33Z",
      "native_id": "MED:42924042",
      "source": "europepmc",
      "url": "https://europepmc.org/article/MED/42924042"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "openalex:3104|GaN-based semiconductor devices and materials",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Plateau–Rayleigh Instability–Driven Shell-First Growth of (Ge, Si1– x Ge x )–AlN Core–Shell Crystals Exhibiting Telecom E-Band Photoluminescence",
  "title_text": "Plateau–Rayleigh Instability–Driven Shell-First Growth of (Ge, Si1– x Ge x )–AlN Core–Shell Crystals Exhibiting Telecom E-Band Photoluminescence",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:20:33Z",
  "url": "https://research.draconitic.com/paper/287n2rhshnkrx",
  "venue": "ACS Omega",
  "versions": []
}