{
  "abstract": "Ambient-temperature coexistence of ferroelectricity, photoconductivity, and ionic transport in ultra-thin van der Waals (vdW) compound CuCrP2S6 (CCPS) offers significant potential for multifunctional electronic, photonic, and neuromorphic applications. However, ferroelectricity and ionic transport can become antagonistic when sharing a common atomic origin, like the copper ions in CCPS. We address this fundamental dichotomy by systematically investigating the thickness-dependent evolution of ferroelectricity, ionic migration, and memristive behavior in CCPS diodes via electrostatic and photo-assisted interfacial band tuning. Using piezoresponse, Kelvin probe, and conductive atomic force microscopy, alongside photoexcited transport measurements, we identify distinct thickness regimes. CCPS flakes thinner than ~ 40 nm exhibit robust, reversible ferroelectric (FE) switching. Conversely, thicker samples display suppressed switchable polarization, with electrical conduction dominated by Cu+ migration, filamentary memristive switching, and rectification reversal. Optical illumination further enhances ionic mobility via photogenerated carriers, driving photo-assisted ionic transport in non-FE flakes and a coupled photoferroionic response in FE flakes. These findings clarify how ferroelectricity fundamentally alters ionic transport dynamics in vdW ferroionic systems.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.02380",
  "author_total": 4,
  "authors": [
    {
      "name": "Subhashree Chatterjee"
    },
    {
      "name": "Abhishek Bajgain"
    },
    {
      "name": "Rabindra Basnet"
    },
    {
      "name": "Ramesh C. Budhani"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/2cv2ykkrt76xe.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.02380",
  "fulltext_url": null,
  "id": "2cv2ykkrt76xe",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.02380",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2208|Ferroelectric and Negative Capacitance Devices"
    ]
  ],
  "openalex": "W7220461249",
  "pdf_url": "https://arxiv.org/pdf/2610.02380",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-01",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/2cv2ykkrt76xe.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:26:45Z",
      "native_id": "2610.02380",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.02380"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Thickness-Controlled Ferroelectric-to-Ionic Transport in CuCrP2S6 at Room Temperature",
  "title_text": "Thickness-Controlled Ferroelectric-to-Ionic Transport in CuCrP2S6 at Room Temperature",
  "type": "preprint",
  "updated_at": "2026-10-30T12:26:45Z",
  "url": "https://research.draconitic.com/paper/2cv2ykkrt76xe",
  "venue": "arXiv",
  "versions": []
}