{
  "abstract": "Point defects with optically addressable spin states are a key building block for quantum networks, but few solid-state emitters combine a spin-photon interface with emission in the low-loss telecommunications band. Vanadium (V4+) defects in silicon carbide (SiC) meet this requirement, emitting zero-phonon lines (ZPLs) throughout the telecom O-band in both the 4H- and 6H-SiC polytypes while retaining an addressable electron and nuclear spin system [1,2]. Although the orbital and spin structure of these defects has been characterized in detail, the polarization selection rules have not been fully mapped experimentally. Here we present polarization-dependent photoluminescence (PL) measurements of vanadium ZPLs in 4H- and 6H-SiC at cryogenic temperature, of two scattering geometries: edge and face-on (emission wavevector perpendicular and parallel to the crystal c-axis, respectively). Emission from two of the four α sites, (α2 and α3) and the 6H-SiC γ sites, are polarized parallel to the c-axis (σ-polarized), whereas emission from α1 and α4 are polarized perpendicular to the c-axis (π-polarized). Additionally, we report preliminary, lower signal measurements of the \\b{eta} sites.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.10781",
  "author_total": 4,
  "authors": [
    {
      "name": "Ibrahim Boulares"
    },
    {
      "name": "Anne R. Evans"
    },
    {
      "name": "Jeremy L. Smith"
    },
    {
      "name": "Brenda VanMil"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/2ka4w8dq1c6y2.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.10781",
  "fulltext_url": null,
  "id": "2ka4w8dq1c6y2",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.10781",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "physics.optics"
    ],
    [
      "openalex",
      "2505|Diamond and Carbon-based Materials Research"
    ]
  ],
  "openalex": "W7221168205",
  "pdf_url": "https://arxiv.org/pdf/2610.10781",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-07",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/2ka4w8dq1c6y2.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:27:54Z",
      "native_id": "2610.10781",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.10781"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.optics",
      "subfield": "optics-photonics"
    }
  ],
  "title": "Photoluminescence study of Vanadium in 4H- and 6H- Silicon Carbide",
  "title_text": "Photoluminescence study of Vanadium in 4H- and 6H- Silicon Carbide",
  "type": "preprint",
  "updated_at": "2026-10-30T12:27:54Z",
  "url": "https://research.draconitic.com/paper/2ka4w8dq1c6y2",
  "venue": "arXiv",
  "versions": []
}