{
  "abstract": "In this work, we report the fabrication and characterisation of an InGaAs/InP double heterojunction bipolar transistor (DHBT) on an indium phosphide-on-silicon (InPoSi) substrate. The device exhibits a DC current gain of 65. Dynamic measurements performed on a submicron 0.35 × 3 µm 2 device further confirm its high -frequency capability, with a current -gain cutoff frequency ( f T ) of 200 GHz and a maximum oscillation frequency ( f max ) of 90 GHz, indicating its suitability for high -frequency applications and the strong potential of the InPoSi platform for high -performance bipolar technologies. Thermal resistance ( R TH ) was extracted for a device with an area of 0.5 × 10 µm 2 , yielding a value of 5867 K/W, which is approximately 2.5 times higher than that of a standard DHBT on its own InP substrate with the same topology. This result provides important insight into the thermal management challenges associated with InPoSi-based DHBTs.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 8,
  "authors": [
    {
      "name": "Rita Younes"
    },
    {
      "name": "Abdelmalek Zemour"
    },
    {
      "name": "Christophe Coinon"
    },
    {
      "name": "Malek Zegaoui"
    },
    {
      "name": "Yannick Roelens"
    },
    {
      "name": "Pascal Chevalier"
    },
    {
      "name": "Bruno Ghyselen"
    },
    {
      "name": "Mohammed Zaknoune"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/2qfbz9n56w8sb.bib",
  "cited_by": 0,
  "doi": "10.1049/ell2.70730",
  "fulltext_url": null,
  "id": "2qfbz9n56w8sb",
  "issns": [
    "0013-5194",
    "1350-911X"
  ],
  "landing_url": "https://hal.science/hal-05805459v1",
  "language": "en",
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.phys"
    ],
    [
      "hal",
      "0.spi"
    ],
    [
      "openalex",
      "2208|Advancements in Semiconductor Devices and Circuit Design"
    ]
  ],
  "openalex": "W7214704144",
  "pdf_url": "https://hal.science/hal-05805459/document",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-19",
  "publisher": "IET",
  "ris": "https://research.draconitic.com/paper/2qfbz9n56w8sb.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:59Z",
      "native_id": "hal-05805459",
      "source": "hal",
      "url": "https://hal.science/hal-05805459v1"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "hal:0.phys",
      "subfield": "general"
    }
  ],
  "title": "Submicron Double Heterojunction Bipolar Transistors on Indium Phosphide‐on‐Silicon",
  "title_text": "Submicron Double Heterojunction Bipolar Transistors on Indium Phosphide‐on‐Silicon",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:59Z",
  "url": "https://research.draconitic.com/paper/2qfbz9n56w8sb",
  "venue": "Electronics Letters",
  "versions": []
}