{
  "abstract": "Two-dimensional III-nitride alloys provide a composition-tunable platform for exploring thermoelectric transport and intrinsic electric-field tolerance. We combine first-principles electronic-structure calculations with semiclassical transport for ordered monolayer B$_{x}$Al$_{1-x}$N and B$_{x}$Ga$_{1-x}$N. State-dependent momentum relaxation times computed with AMSET include acoustic deformation-potential and piezoelectric scattering. Using a common, temperature-independent lattice thermal conductivity of 550 W/mK, we predict maximum thermoelectric figure of merit ZT>2.5 for selected p- and n-type monolayers and ZT>2 at 300~K for n-type B$_{0.25}$Ga$_{0.75}$N. Composition-dependent band curvature, screening, and scattering help interpret the different p- and n-type responses. Vacuum-referenced band alignments identify candidate modulation-doping partners for both carrier types; explicit hGaN/V$_2$O$_5$ calculations yield a hole surface density of approximately 1.6$\\times10^{14}$ cm$^{-2}$. A separate phenomenological model using the band gap and maximum phonon frequency predicts intrinsic breakdown fields of 20.06 and 20.74 MVcm for the Al- and Ga-containing x=0.75 alloys, respectively. These results motivate further investigation for thermoelectric and high-field power-electronic applications. The ZT values apply to the specified scattering and lattice-conductivity models, while the breakdown estimates require validation for monolayers and do not resolve field direction.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.31777",
  "author_total": 1,
  "authors": [
    {
      "name": "Ariel R. Barr"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/2thvqgw4zhgt5.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.31777",
  "fulltext_url": null,
  "id": "2thvqgw4zhgt5",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.31777",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2505|Advanced Thermoelectric Materials and Devices"
    ]
  ],
  "openalex": "W7223679863",
  "pdf_url": "https://arxiv.org/pdf/2610.31777",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-22",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/2thvqgw4zhgt5.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:35:15Z",
      "native_id": "2610.31777",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.31777"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Thermoelectric properties and modulation doping of ultrawide-bandgap nitride monolayers",
  "title_text": "Thermoelectric properties and modulation doping of ultrawide-bandgap nitride monolayers",
  "type": "preprint",
  "updated_at": "2026-10-30T12:35:15Z",
  "url": "https://research.draconitic.com/paper/2thvqgw4zhgt5",
  "venue": "arXiv",
  "versions": []
}