{
  "abstract": "The nonlinear Hall effect (NLHE) holds significant promise for next-generation electronic device applications, and it is essential to explore and engineer a strong and highly tunable NLHE. In this work, we report large second-order and third-order NLHEs in dual-gated BiSbTeSe2 devices. Both the second-order and third-order NLHE are highly gate-tunable. The second-order NLHE exhibits a higher generation efficiency than those reported in previous topological insulator systems, and it can be stably observed up to room temperature. Meanwhile, the generation efficiency of the third-order NLHE is comparable to previously reported values. The scaling analysis indicates that the second-order NLHE is consistent with contributions from skew scattering and a term compatible with either the Berry curvature dipole or side jump, whereas the third-order NLHE is consistent with contributions from the Berry connection polarizability tensor and higher-order skew scattering. Our work establishes a promising experimental platform for the development of NLHE-based devices.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": "Journal reference: Phys. Rev. Materials 10, 104202 (2026)",
  "arxiv": "2610.05713",
  "author_total": 10,
  "authors": [
    {
      "name": "Fengyi Guo"
    },
    {
      "name": "Shuai Zhang"
    },
    {
      "name": "Xiubing Li"
    },
    {
      "name": "Zheng Dai"
    },
    {
      "name": "Congcong Li"
    },
    {
      "name": "Yufan Ju"
    },
    {
      "name": "Ziqi Wang"
    },
    {
      "name": "Cheng Bin"
    },
    {
      "name": "Zhe Ying"
    },
    {
      "name": "Fengqi Song"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/2vq0njr13xe7b.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.05713",
  "fulltext_url": null,
  "id": "2vq0njr13xe7b",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.05713",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2610.05713",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-05",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/2vq0njr13xe7b.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:29:06Z",
      "native_id": "2610.05713",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.05713"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Gate-tunable large second-order and third-order nonlinear Hall effect in topological insulator BiSbTeSe2",
  "title_text": "Gate-tunable large second-order and third-order nonlinear Hall effect in topological insulator BiSbTeSe2",
  "type": "preprint",
  "updated_at": "2026-10-30T12:29:06Z",
  "url": "https://research.draconitic.com/paper/2vq0njr13xe7b",
  "venue": "arXiv",
  "versions": [
    {
      "doi": "10.1103/y55k-pvgq",
      "pid": null,
      "relation": "published-as",
      "title": null,
      "venue": null
    }
  ]
}