{
  "abstract": "Spintronics drives the search for functional materials, pursuing room-temperature dilute magnetic semiconductors to realize practical, energy-efficient devices. This paper presents a theoretical investigation into the magnetic properties of w-AlN doped with Cr, Ru, and Rh atoms, using spin-polarized density functional theory calculations with supercell models. Calculations of point-defect formation energies as a function of the Fermi level predict that Cr4+, Ru4+, and Rh3+ are the most favorable charge states substituting Al in w-AlN. With these preferred charge states, Cr-doped AlN is stable in the ferromagnetic state, preferable for spintronic devices, across a wide concentration range (1.85 to 16.67% of Al). Conversely, Ru- and Rh-doped AlN are unstable in the ferromagnetic state relative to the antiferromagnetic state. Further investigation into the electronic density of states reveals a fascinating evolution: for Cr concentrations below 5.56%, the Fermi level resides within the band gap directly above the valence band maximum, keeping the system insulating. It transitions to a high-spin half-metallic state between 7.40% and 12.96%, and finally transforms into a normal metal at 16.67% Cr. This behavior is absent in the DOS of the antiferromagnetic model of Ru- and Rh-doped systems, where insulating and metallic behaviors instead appear non-sequentially with varying concentrations.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.30815",
  "author_total": 1,
  "authors": [
    {
      "name": "Chinnappan Ravi"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/2ynhcycfse1ve.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.30815",
  "fulltext_url": null,
  "id": "2ynhcycfse1ve",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.30815",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7214592455",
  "pdf_url": "https://arxiv.org/pdf/2609.30815",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-25",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/2ynhcycfse1ve.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:24:52Z",
      "native_id": "2609.30815",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.30815"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Engineering Ferromagnetism in Wide Bandgap w-AlN for Spintronic Applications: Insights from DFT Calculations",
  "title_text": "Engineering Ferromagnetism in Wide Bandgap w-AlN for Spintronic Applications: Insights from DFT Calculations",
  "type": "preprint",
  "updated_at": "2026-10-30T12:24:52Z",
  "url": "https://research.draconitic.com/paper/2ynhcycfse1ve",
  "venue": "arXiv",
  "versions": []
}