{
  "abstract": "We demonstrate high-performance UWBG AlGaN PolFETs exhibiting a state-of-the-art combination of nearly 1 A/mm on-state current (∼960 mA/mm) and a large breakdown field (>4.8 MV/cm) in high carrier density (1.15 × 1013 cm−2). Multi-kV robustness is successfully demonstrated, exhibiting 1.28 and 2.17 kV by utilizing a gate-connected field plate structure in 3.9 and 6.8 μm LGD, corresponding to the extremely low specific on-resistance of 1.25 and 2.86 mΩ cm2, respectively. High RF performance is also achieved, providing fT and fMAX of 8.5 and 15 GHz, respectively, for 3.9 μm LGD. These results highlight UWBG AlGaN as a platform for both high-voltage RF and power applications.",
  "abstract_shown": true,
  "affiliations": [
    "Department of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210,",
    "Air Force Research Laboratory, Information and Spectrum Warfare Directorate, Wright-Patterson AFB 2 , Dayton, Ohio 45433,",
    "Sandia National Laboratories 3 , Albuquerque, New Mexico 87123,",
    "Department of Materials Science and Engineering, The Ohio State University 4 , Columbus, Ohio 43210,"
  ],
  "article_type": null,
  "arxiv": null,
  "author_total": 9,
  "authors": [
    {
      "affs": [
        0
      ],
      "name": "Seungheon Shin",
      "orcid": "0009-0000-2391-2414"
    },
    {
      "affs": [
        1
      ],
      "name": "Kyle J. Liddy",
      "orcid": "0000-0003-4412-7073"
    },
    {
      "affs": [
        0
      ],
      "name": "Jonathan Pratt",
      "orcid": "0009-0009-6480-5792"
    },
    {
      "affs": [
        0
      ],
      "name": "Can Cao"
    },
    {
      "affs": [
        0
      ],
      "name": "Yinxuan Zhu",
      "orcid": "0009-0000-0734-5210"
    },
    {
      "affs": [
        2
      ],
      "name": "Brianna Klein",
      "orcid": "0000-0001-5844-2440"
    },
    {
      "affs": [
        2
      ],
      "name": "Andrew M. Armstrong",
      "orcid": "0000-0003-0391-6009"
    },
    {
      "affs": [
        2
      ],
      "name": "Andrew A. Allerman"
    },
    {
      "affs": [
        0,
        3
      ],
      "name": "Siddharth Rajan",
      "orcid": "0000-0003-4241-3391"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/388veaq5rzjqm.bib",
  "cited_by": 7,
  "doi": "10.1063/5.0337643",
  "fulltext_url": null,
  "id": "388veaq5rzjqm",
  "issns": [
    "2995-8423"
  ],
  "landing_url": "https://doi.org/10.1063/5.0337643",
  "language": "en",
  "licence": "CC-BY",
  "licence_label": "CC BY",
  "licence_source": "journal",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7162467814",
  "pdf_url": null,
  "pmcid": null,
  "pmid": null,
  "published": "2026-05-26",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/388veaq5rzjqm.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T13:26:43Z",
      "native_id": "W7162467814",
      "source": "openalex",
      "url": "https://doi.org/10.1063/5.0337643"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "openalex:3104|GaN-based semiconductor devices and materials",
      "subfield": "condensed-matter"
    }
  ],
  "title": "High breakdown field multi-kV UWBG AlGaN transistors",
  "title_text": "High breakdown field multi-kV UWBG AlGaN transistors",
  "type": "peer-reviewed",
  "updated_at": "2026-11-03T13:20:27Z",
  "url": "https://research.draconitic.com/paper/388veaq5rzjqm",
  "venue": "APL Electronic Devices",
  "versions": []
}