{
  "abstract": "We investigate the effects of substrate temperature and Al flux, at a fixed N flux, on the polarity, electrical properties, and structural quality of AlN films grown on high-resistivity Si(111) by plasma-assisted molecular beam epitaxy. N-rich conditions result in relatively highly resistive Al-polar AlN/Si, whereas Al-rich conditions promote N-polarity and improved structural quality but simultaneously lead to increased p-type conductivity of AlN/Si stacks, consistent with unintentional Al doping of the Si substrate during AlN growth. Increasing the substrate temperature further improves the structural quality while enhancing the unwanted conductivity, revealing a growth-induced trade-off among polarity, electrical isolation, and structural quality. By reducing the substrate temperature to 575°C while maintaining slightly Al-rich conditions, an N-polar AlN/Si stack with a sheet resistance of 276 kΩ/sq is achieved. These results provide guidelines for optimizing AlN/Si templates for various nitride device heterostructures.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.20523",
  "author_total": 6,
  "authors": [
    {
      "name": "Hossein Yazdani"
    },
    {
      "name": "Nhu Tran"
    },
    {
      "name": "Xin Du"
    },
    {
      "name": "Vit Hornik"
    },
    {
      "name": "Roman Gröger"
    },
    {
      "name": "YongJin Cho"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/3dpywezehmjc6.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.20523",
  "fulltext_url": null,
  "id": "3dpywezehmjc6",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.20523",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7222186622",
  "pdf_url": "https://arxiv.org/pdf/2610.20523",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-14",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/3dpywezehmjc6.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:29:31Z",
      "native_id": "2610.20523",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.20523"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Growth-induced trade-off between polarity, electrical isolation, and structural quality in AlN grown on Si(111) by plasma-assisted molecular beam epitaxy",
  "title_text": "Growth-induced trade-off between polarity, electrical isolation, and structural quality in AlN grown on Si(111) by plasma-assisted molecular beam epitaxy",
  "type": "preprint",
  "updated_at": "2026-10-30T12:29:31Z",
  "url": "https://research.draconitic.com/paper/3dpywezehmjc6",
  "venue": "arXiv",
  "versions": []
}