{
  "abstract": "Twisted transition-metal dichalcogenides (TMDs) have manifested a rich variety of emerging physical phenomena, yet experimental studies have so far been largely limited in their valence bands (p-doped). Here, we show correlated electronic states in the conduction bands (n-doped) of near-AA-twisted bilayer MoS$_2$ with twist angles ranging from $\\sim2.3^\\circ$ to $\\sim3.5^\\circ$, down to the mK temperature regime. A strongly reconstructed correlated phase diagram as a function of twist-angle has been observed - correlated gaps persist to temperatures approaching $160$ K at small twist angles, but collapse to only $\\sim20$ K at intermediate angles, where a richer landscape of interaction-driven states emerges. At the largest twist-angle $\\sim 3.5\\,^{\\circ}$, correlated resistance at 1 electron per moiré unit cell is enhanced upon heating, consistent with thermally assisted localization, or, a Pomeranchuk-like behaviour. Its magnetic-field response, however, is highly anisotropic, which differs markedly from that of canonical isospin moiré Pomeranchuk effect in graphene systems. Strikingly, such signature can persist even above 100 K around a filling of 2 electrons per moiré, despite of its weak resistive nature. Our results establish the twisted MoS$_2$ as a platform for studying the complexity of charge localization, internal flavour degrees of freedom, and band topology in conduction bands of semiconducting moiré systems.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.30128",
  "author_total": 11,
  "authors": [
    {
      "name": "Zhiren Xiong"
    },
    {
      "name": "Jianqi Huang"
    },
    {
      "name": "Ruyue Han"
    },
    {
      "name": "Hanwen Wang"
    },
    {
      "name": "Hui Ding"
    },
    {
      "name": "Jianming Lu"
    },
    {
      "name": "Jianpeng Liu"
    },
    {
      "name": "Zheng Vitto Han"
    },
    {
      "name": "Xingdan Sun"
    },
    {
      "name": "Siwen Zhao"
    },
    {
      "name": "Baojuan Dong"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/3fjmrjea112hz.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.30128",
  "fulltext_url": null,
  "id": "3fjmrjea112hz",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.30128",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2505|2D Materials and Applications"
    ]
  ],
  "openalex": "W7214304368",
  "pdf_url": "https://arxiv.org/pdf/2609.30128",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-25",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/3fjmrjea112hz.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:24:52Z",
      "native_id": "2609.30128",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.30128"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Pomeranchuk-like electronic localization above 100 K in twisted MoS$_{2}$",
  "title_text": "Pomeranchuk-like electronic localization above 100 K in twisted MoS_2",
  "type": "preprint",
  "updated_at": "2026-10-30T12:24:52Z",
  "url": "https://research.draconitic.com/paper/3fjmrjea112hz",
  "venue": "arXiv",
  "versions": []
}