{
  "abstract": "Spintronic synaptic devices based on magnetic random access memory (MRAM) are a rapidly evolving class within the analog neuromorphic architecture. However, obtaining the multi-weight or analog behavior desired for improved neural network inference accuracy in scaled MRAM remains a challenge. In this study, we demonstrate and tune up to eight distinct resistance levels in 300 mm wafer-scale magnetic tunnel junction artificial synapses driven by spin orbit torque. By varying the applied in-plane field, multi-weight resistance states emerge through domain wall nucleation and pinning. These multi-weight states appear stochastically and can be addressed with an iterative programming algorithm to program a specific resistance. Electromagnetic simulations indicate the multiple states are due to domain wall nucleation mediated by in-plane field and applied voltage. Implementation of the measured multi-weight devices in a neural network yields a 96.1% inference accuracy using the MNIST dataset if all devices provide the same number of multi-weight states. When experimental device-to-device variation is included, the accuracy is 48.6%. Overall, this work demonstrates a route towards multi-weight artificial synapse MRAM, establishing a path towards scalable neuromorphic systems based on spintronics.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2611.08405",
  "author_total": 9,
  "authors": [
    {
      "name": "Nicholas Zogbi"
    },
    {
      "name": "Domenico Giuliano"
    },
    {
      "name": "Vaishnavi Kateel"
    },
    {
      "name": "Van Dai Nguyen"
    },
    {
      "name": "Jyotirmoy Chatterjee"
    },
    {
      "name": "Alvaro Palomino"
    },
    {
      "name": "Robert Carpenter"
    },
    {
      "name": "Siddharth Rao"
    },
    {
      "name": "Jean Anne C. Incorvia"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/3ggcmms4zsqq7.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2611.08405",
  "fulltext_url": null,
  "id": "3ggcmms4zsqq7",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2611.08405",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2611.08405",
  "pmcid": null,
  "pmid": null,
  "published": "2026-11-05",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/3ggcmms4zsqq7.ris",
  "sources": [
    {
      "first_seen": "2026-11-06T18:21:30Z",
      "native_id": "2611.08405",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2611.08405"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Synaptic Multi-Weight Wafer-Scale Domain Wall Magnetic Tunnel Junctions Driven by Spin Orbit Torque",
  "title_text": "Synaptic Multi-Weight Wafer-Scale Domain Wall Magnetic Tunnel Junctions Driven by Spin Orbit Torque",
  "type": "preprint",
  "updated_at": "2026-11-09T00:20:41Z",
  "url": "https://research.draconitic.com/paper/3ggcmms4zsqq7",
  "venue": "arXiv",
  "versions": []
}