{
  "abstract": "Semiconductor photodetectors are conventionally optimized for sensing weak optical signals, and they typically saturate at low-to-moderate light intensity. Here, we demonstrate AlN photodetectors that exhibit non-saturating linear response to ultra-bright, sub-bandgap light exceeding 40 $\\mathrm{W/cm^2}$ (over 400 Suns). The photodetector further shows undistorted linear response at elevated temperature, up to at least 300 $\\mathrm{^\\circ C}$. This exceptional performance originates from photoresponse mediated by point defects with energy levels deep in the bandgap (deep levels) at the metal-AlN Schottky junction. Through dopant design and contact engineering, we demonstrate that a narrow space-charge region is essential for enabling ultra-bright light detection and accurate measurement. These results establish a strategy for engineering ultra-wide bandgap (UWBG) semiconductor devices for reliable operation in extreme conditions to meet emerging needs in industrial process control, thermal and nuclear power generation, and aeronautics and spaceflight.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2606.07807",
  "author_total": 4,
  "authors": [
    {
      "name": "Jiahao Dong"
    },
    {
      "name": "Zhenjing Liu"
    },
    {
      "name": "Sara Tulchinsky"
    },
    {
      "name": "Rafael Jaramillo"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/3k6qkx66zf03g.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2606.07807",
  "fulltext_url": null,
  "id": "3k6qkx66zf03g",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2606.07807",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.optics"
    ],
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7164004690",
  "pdf_url": "https://arxiv.org/pdf/2606.07807",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-16",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/3k6qkx66zf03g.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:22:19Z",
      "native_id": "2606.07807",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2606.07807"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    },
    {
      "field": "physics",
      "origin": "arxiv:physics.optics",
      "subfield": "optics-photonics"
    }
  ],
  "title": "Deep-level engineering in aluminum nitride (AlN) enables reliable photodetection in extreme conditions",
  "title_text": "Deep-level engineering in aluminum nitride (AlN) enables reliable photodetection in extreme conditions",
  "type": "preprint",
  "updated_at": "2026-10-30T12:22:19Z",
  "url": "https://research.draconitic.com/paper/3k6qkx66zf03g",
  "venue": "arXiv",
  "versions": []
}