{
  "abstract": "Oxidation and ablation of 200 nm tantalum films were carried out by three routes: (i) femtosecond (fs-)laser direct write, (ii) high-temperature annealing (HTA) in a tube furnace, and (iii) annealing in a 2.45 GHz microwave cavity. Complete conversion of the 200 nm Ta layer into 409 nm of Ta2O5 required one hour at 600 C in the furnace, but only minutes at ~ 50 W of microwave power. Fs-laser (515 nm/200 fs) oxidation of the Ta nano-film set in at an average single-pulse fluence of ~ 0.1 J/cm2 under strong pulse-to-pulse overlap (900 pulses per focal spot), i.e. within a narrow window bounded from above by the onset of ablation. Under microwave annealing, both the cavity resonance frequency and the quality factor Q changed markedly at the metal-to-oxide transition, reflecting the collapse of the real and imaginary parts of the permittivity at 2.45 GHz. This dielectric contrast turns the cavity into a sensor: the oxidation can be followed in real time from the shift of the cavity resonance, providing a non-invasive, in-situ diagnostic tool.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.06019",
  "author_total": 7,
  "authors": [
    {
      "name": "Massimiliano Zamengo"
    },
    {
      "name": "Lina Grineviciute"
    },
    {
      "name": "Hsin-Hui Huang"
    },
    {
      "name": "Haoran Mu"
    },
    {
      "name": "Julianija Nikitina"
    },
    {
      "name": "Saulius Juodkazis"
    },
    {
      "name": "Junko Morikawa"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/3qpk0p7ncrdcx.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.06019",
  "fulltext_url": null,
  "id": "3qpk0p7ncrdcx",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.06019",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2208|Semiconductor materials and devices"
    ]
  ],
  "openalex": "W7212016596",
  "pdf_url": "https://arxiv.org/pdf/2609.06019",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-05",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/3qpk0p7ncrdcx.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:19:48Z",
      "native_id": "2609.06019",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.06019"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Oxidation of Tantalum Nano-Film by Microwave Exposure",
  "title_text": "Oxidation of Tantalum Nano-Film by Microwave Exposure",
  "type": "preprint",
  "updated_at": "2026-10-30T12:19:48Z",
  "url": "https://research.draconitic.com/paper/3qpk0p7ncrdcx",
  "venue": "arXiv",
  "versions": []
}