{
  "abstract": "Silicon-based spin qubits in Si/SiGe heterostructures are a leading platform for scalable quantum computing, yet bridging the gap between theoretical computer-aided design(CAD) models and experimental reality remains a significant challenge. Standard simulations often fail to capture critical physical phenomena, such as interface dipoles, parasitic charge accumulation, and the magnetic hysteresis of on-chip micromagnets. In this work, we present a comprehensive, experimentally calibrated 3D simulation pipeline for a 6-dot Si/SiGe device. We refine the semiconductor band alignment and introduce a semi-empirical classical charge screening model to accurately capture the formation of parasitic wells and their suppression of gate lever-arms. Furthermore, we apply the Jiles-Atherton model to account for the hysteresis and pre-magnetization of integrated cobalt micromagnets, successfully reproducing the experimental resonant frequencies across all six qubits. By coupling these calibrated electrostatic and magnetic profiles into a time-dependent rotating wave approximation (RWA) Hamiltonian, we reproduce experimental observables, including microwave power chevrons. This framework provides a robust foundation for predicting device behavior, evaluating microwave line losses, and optimizing future scalable spin qubit architectures prior to fabrication.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.27724",
  "author_total": 10,
  "authors": [
    {
      "name": "Andrii Sokolov"
    },
    {
      "name": "Conor Power"
    },
    {
      "name": "Mathieu Moras"
    },
    {
      "name": "Claude Rohrbacher"
    },
    {
      "name": "Brian Malone"
    },
    {
      "name": "Sergey Amitonov"
    },
    {
      "name": "Agostino Apra"
    },
    {
      "name": "Amir Sammak"
    },
    {
      "name": "Nodar Samkharadze"
    },
    {
      "name": "Elena Blokhina"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/3tx141qpzv6ne.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.27724",
  "fulltext_url": null,
  "id": "3tx141qpzv6ne",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.27724",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "quant-ph"
    ],
    [
      "openalex",
      "3107|Quantum and electron transport phenomena"
    ]
  ],
  "openalex": "W7214237730",
  "pdf_url": "https://arxiv.org/pdf/2609.27724",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-23",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/3tx141qpzv6ne.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:23:56Z",
      "native_id": "2609.27724",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.27724"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    },
    {
      "field": "physics",
      "origin": "arxiv:quant-ph",
      "subfield": "quantum"
    }
  ],
  "title": "Quantum Simulation of Si/SiGe Devices with Experimentally Calibrated Micromagnet Effects",
  "title_text": "Quantum Simulation of Si/SiGe Devices with Experimentally Calibrated Micromagnet Effects",
  "type": "preprint",
  "updated_at": "2026-10-30T12:23:56Z",
  "url": "https://research.draconitic.com/paper/3tx141qpzv6ne",
  "venue": "arXiv",
  "versions": []
}