{
  "abstract": "A detailed study of emission wavelength tailoring of GaSb-based QDs formed by InGaSb-filling of droplet-etched nanoholes in AlGaSb is presented. The study shows that the emission wavelength can be modified from 1.48 um to the center of the telecom C-band at 1.55 mm by independently varying the QD composition and size. More specifically, the optical transition energy shifts linearly as a function of In-content of the QD material at a rate of -4.4 meV/In-percentage, and with the number of monolayers (ML) of material used for filling the nanoholes, at -2.0 meV/ML. These experimentally observed energy shifts are well predicted by simulations yielding rates of -4.3 meV/In-percentage and -2.1 meV/ML, respectively. For the simulation, a uniform In composition, low intermixing, and microscopically measured QD geometry is considered. Additionally, excellent ensemble QD uniformity, with unprecedented inhomogeneous broadening well-below 7 meV across all samples is demonstrated. Finally, photoluminescence of single-QDs reveals narrow excitonic emission lines of 13.8+/-6.7 ueV and low fine-structure splitting values reaching <10 ueV. These results identify GaSb-based LDE QDs as a tunable telecom platform for scaling quantum-photonic applications over long-haul optical fiber networks.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2608.30628",
  "author_total": 14,
  "authors": [
    {
      "name": "Markus Peil"
    },
    {
      "name": "Maja Wasiluk"
    },
    {
      "name": "Ziemowit Olinkiewicz"
    },
    {
      "name": "Tymon Przychodni"
    },
    {
      "name": "Robert Matysiak"
    },
    {
      "name": "Teemu Taskinen"
    },
    {
      "name": "Joona Salonen"
    },
    {
      "name": "Abhiroop Chellu"
    },
    {
      "name": "Metin Patli"
    },
    {
      "name": "Joonas Hilska"
    },
    {
      "name": "Anna Musiał"
    },
    {
      "name": "Michał Gawełczyk"
    },
    {
      "name": "Mircea Guina"
    },
    {
      "name": "Teemu Hakkarainen"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/3vjrqgrcvk792.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2608.30628",
  "fulltext_url": null,
  "id": "3vjrqgrcvk792",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2608.30628",
  "language": null,
  "licence": "CC-BY-SA-4.0",
  "licence_label": "CC BY-SA 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by-sa/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "openalex",
      "3107|Semiconductor Quantum Structures and Devices"
    ]
  ],
  "openalex": "W7204967181",
  "pdf_url": "https://arxiv.org/pdf/2608.30628",
  "pmcid": null,
  "pmid": null,
  "published": "2026-08-31",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/3vjrqgrcvk792.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:41Z",
      "native_id": "2608.30628",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2608.30628"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Predictive wavelength tailoring of uniform GaSb-based quantum dots for emission at 1.55 um",
  "title_text": "Predictive wavelength tailoring of uniform GaSb-based quantum dots for emission at 1.55 um",
  "type": "preprint",
  "updated_at": "2026-10-30T12:17:41Z",
  "url": "https://research.draconitic.com/paper/3vjrqgrcvk792",
  "venue": "arXiv",
  "versions": []
}