{
  "abstract": "We report the cryogenic characterization of a 14-nm nMOS Forksheet transistor down to 10 mK. We demonstrate that the device retains transistor operation with improved characteristics at cryogenic temperatures, while also forming a gate-defined quantum dot that can be tuned to the single-electron regime. In the quantum-dot regime, we perform low-frequency charge-noise measurements across different charge occupations and observe an average charge-noise amplitude of $\\langle S_0\\rangle = 10\\;μ\\mathrm{eV}/\\sqrt{\\mathrm{Hz}}$ at 1 Hz, with a minimum measured value of $3.3\\;μ\\mathrm{eV}/\\sqrt{\\mathrm{Hz}}$. These results highlight the potential of Forksheet technology for the monolithic cointegration of quantum and classical CMOS functionalities in future quantum processors.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.24136",
  "author_total": 9,
  "authors": [
    {
      "name": "Dominic Leclerc"
    },
    {
      "name": "Claude Rohrbacher"
    },
    {
      "name": "Alexis Morel"
    },
    {
      "name": "Joffrey Rivard"
    },
    {
      "name": "Romain Ritzenthaler"
    },
    {
      "name": "Christian Lupien"
    },
    {
      "name": "Hans Mertens"
    },
    {
      "name": "Naoto Horiguchi"
    },
    {
      "name": "Eva Dupont-Ferrier"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/3zrq4aahdk67p.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.24136",
  "fulltext_url": null,
  "id": "3zrq4aahdk67p",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.24136",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "quant-ph"
    ],
    [
      "openalex",
      "3107|Quantum and electron transport phenomena"
    ]
  ],
  "openalex": "W7223061064",
  "pdf_url": "https://arxiv.org/pdf/2610.24136",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-16",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/3zrq4aahdk67p.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:30:52Z",
      "native_id": "2610.24136",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.24136"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    },
    {
      "field": "physics",
      "origin": "arxiv:quant-ph",
      "subfield": "quantum"
    }
  ],
  "title": "Gate-defined quantum dot and charge noise analysis in a Forksheet transistor",
  "title_text": "Gate-defined quantum dot and charge noise analysis in a Forksheet transistor",
  "type": "preprint",
  "updated_at": "2026-10-30T12:33:41Z",
  "url": "https://research.draconitic.com/paper/3zrq4aahdk67p",
  "venue": "arXiv",
  "versions": []
}