{
  "abstract": "Point defects in wide-bandgap semiconductors offer spin and photonic qubits in a solid-state platform, making them important building blocks for quantum information processing, communication, and sensing. While these systems have the strong advantage of room-temperature operation, intrinsic electron-phonon interaction induces broad phonon-sideband emission and weak zero-phonon-line transitions, limiting efficient spin-photon interfaces and scalable photon-mediated interaction. Here, we introduce a controlled heterophase interface based on the remote epitaxy technique as a crystal heterogeneity-engineering strategy. While stacking faults are treated as imperfections to be eliminated, our results instead show that crystal-phase interfaces can provide an additional degree of freedom to engineer defect-phonon interaction beyond the intrinsic properties of a single crystal. In comparison with single-phase 4H-silicon carbide (SiC) membranes, Vsi in 3C/4H heterointerface SiC exhibits a drastic enhancement of zero-phonon optical transitions, with a substantially narrower zero-phonon linewidth of 4.71 meV even at room temperature. These results establish heterophase-interface engineering as an effective route for tailoring defect-phonon interactions and realizing bright room-temperature quantum emitters with enhanced zero-phonon optical transitions.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.33545",
  "author_total": 5,
  "authors": [
    {
      "name": "Kirlie Iulius Figuera Michal"
    },
    {
      "name": "Jin Hee Lee"
    },
    {
      "name": "Keiju Sato"
    },
    {
      "name": "Takuji Maekawa"
    },
    {
      "name": "Je-Hyung Kim"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/41srwat5c5f10.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.33545",
  "fulltext_url": null,
  "id": "41srwat5c5f10",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.33545",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "quant-ph"
    ],
    [
      "openalex",
      "2505|Diamond and Carbon-based Materials Research"
    ]
  ],
  "openalex": "W7214798533",
  "pdf_url": "https://arxiv.org/pdf/2609.33545",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-27",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/41srwat5c5f10.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:25:12Z",
      "native_id": "2609.33545",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.33545"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    },
    {
      "field": "physics",
      "origin": "arxiv:quant-ph",
      "subfield": "quantum"
    }
  ],
  "title": "Engineering Defect-Phonon Interactions Through Heterophase-Interfaces in Silicon Carbide Membranes",
  "title_text": "Engineering Defect-Phonon Interactions Through Heterophase-Interfaces in Silicon Carbide Membranes",
  "type": "preprint",
  "updated_at": "2026-10-30T12:25:12Z",
  "url": "https://research.draconitic.com/paper/41srwat5c5f10",
  "venue": "arXiv",
  "versions": []
}