{
  "abstract": "Platinum diselenide (PtSe$_2$), a member of the transition metal dichalcogenide (TMD) family, is a promising material for next-generation electronic and optoelectronic applications due to its thickness-dependent properties, transitioning from semimetallic in bulk to semiconducting behavior at the few-layer limit. However, the scalable fabrication of large-area ultrathin PtSe$_2$ films remains challenging, as conventional selenization of pre-deposited Pt layers often leads to undesired three-dimensional clustered growth. This work explores a novel strategy for promoting two-dimensional growth of PtSe$_2$ by employing a graphene-mediated confinement approach. The method involves coating a Pt layer with graphene oxide (GO), followed by annealing in a selenium atmosphere, which results in the simultaneous formation of PtSe$_2$ and the reduction of GO to graphene. The graphene overlayer acts as a physical confinement layer, suppressing vertical growth and enabling the synthesis of graphene-confined PtSe$_2$ heterostructures on centimetre-scale substrates and promoting lateral connectivity of PtSe$_2$ regions observed by STEM. Scanning transmission electron microscopy (STEM), including temperature-resolved in situ atomic-resolution measurements, was used to investigate the influence of selenization temperature on the growth mechanism and structural evolution of PtSe$_2$ films. The results show that graphene confinement stabilizes lateral growth and promotes the formation of few-layer films with improved structural ordering. Beyond PtSe$_2$, this graphene-assisted approach provides a general strategy for fabricating and stabilizing ultrathin TMD layers, including those prone to environmental degradation, providing a new outlook for enabling detailed studies of their intrinsic properties.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.15022",
  "author_total": 8,
  "authors": [
    {
      "name": "Timea Ema Krajčovičová"
    },
    {
      "name": "Peter Kotrusz"
    },
    {
      "name": "Viera Skákalová"
    },
    {
      "name": "Agáta Laurenčíková"
    },
    {
      "name": "Igor Píš"
    },
    {
      "name": "Martin Hulman"
    },
    {
      "name": "Kimmo Mustonen"
    },
    {
      "name": "Michaela Sojková"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/4946zfvb8746g.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.15022",
  "fulltext_url": null,
  "id": "4946zfvb8746g",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.15022",
  "language": null,
  "licence": "CC-BY-NC-SA-4.0",
  "licence_label": "CC BY-NC-SA 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by-nc-sa/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2505|2D Materials and Applications"
    ]
  ],
  "openalex": "W7221778261",
  "pdf_url": "https://arxiv.org/pdf/2610.15022",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-10",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/4946zfvb8746g.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:29:06Z",
      "native_id": "2610.15022",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.15022"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Graphene-Confined Growth of Few-Layer PtSe2 via One-Step Selenization",
  "title_text": "Graphene-Confined Growth of Few-Layer PtSe2 via One-Step Selenization",
  "type": "preprint",
  "updated_at": "2026-10-30T12:29:06Z",
  "url": "https://research.draconitic.com/paper/4946zfvb8746g",
  "venue": "arXiv",
  "versions": []
}