{
  "abstract": "We investigate the impact of a monolithic three-dimensional (M3D) integration process-critical $400^\\circ$C post-processing forming gas anneal (FGA) on the electrical performance, reliability, and defect evolution of oxide-channel thin-film transistors (TFTs), combining systematic experiments with density-functional-theory (DFT)-based liquid-quench molecular-dynamics (MD) simulations. Indium tungsten oxide (IWO) TFTs are employed as a model system and encapsulated with a thin 3 nm Al$_2$O$_3$ / 3 nm HfO$_2$ hybrid layer that effectively suppresses external hydrogen ingress. We reveal a non-monotonic evolution of device behavior during FGA, governed by initial densification followed by partial crystallization. Short-duration FGA (10 min) induces channel densification and the formation of shallow, delocalized defect states, leading to pronounced positive bias temperature instability (PBTI) degradation and the emergence of a characteristic transfer-curve \"kink.\" With prolonged annealing (>40 min), partial crystallization of the oxide channel occurs, stabilizing hydrogen in deep, localized defect states, suppressing hydrogen mobility, and restoring device reliability. As a result, the PBTI shift is reduced to 10.4 mV after 2000 seconds of stress, accompanied by complete elimination of the transfer-curve kink. These findings provide a mechanistic understanding of hydrogen-defect interactions during high-temperature post-processing FGA and demonstrate that appropriate hydrogen-blocking encapsulation enables oxide-channel TFT integration without compromising electrical performance or reliability.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": "Journal reference: IEEE Transactions on Electron Devices, vol. 73, no. 5, pp. 3140-3148 (2026)",
  "arxiv": "2609.22509",
  "author_total": 16,
  "authors": [
    {
      "name": "Yu-Hsin Kuo"
    },
    {
      "name": "Chengyang Zhang"
    },
    {
      "name": "Priyankka Ravikumar"
    },
    {
      "name": "Sanghyun Kang"
    },
    {
      "name": "Taeyoung Song"
    },
    {
      "name": "Marco Villena"
    },
    {
      "name": "Luca Larcher"
    },
    {
      "name": "Hwan Kim"
    },
    {
      "name": "Minji Hong"
    },
    {
      "name": "Pilsang Yun"
    },
    {
      "name": "Gaurav Thareja"
    },
    {
      "name": "Shimeng Yu"
    },
    {
      "name": "Daewon Ha"
    },
    {
      "name": "Suman Datta"
    },
    {
      "name": "Julia Medvedeva"
    },
    {
      "name": "Asif Khan"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/4ctjzjpmwcezm.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.22509",
  "fulltext_url": null,
  "id": "4ctjzjpmwcezm",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.22509",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2609.22509",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-18",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/4ctjzjpmwcezm.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:23:19Z",
      "native_id": "2609.22509",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.22509"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during $400^\\circ$C Post-Processing Forming Gas Annealing",
  "title_text": "Experiments and Modeling of Defect Dynamics and BTI Behavior in Doped InO TFTs during 400^∘C Post-Processing Forming Gas Annealing",
  "type": "preprint",
  "updated_at": "2026-10-30T12:23:19Z",
  "url": "https://research.draconitic.com/paper/4ctjzjpmwcezm",
  "venue": "arXiv",
  "versions": [
    {
      "doi": "10.1109/ted.2026.3658060",
      "pid": null,
      "relation": "published-as",
      "title": null,
      "venue": null
    }
  ]
}