{
  "abstract": "We report the effect of nitrogen implantation on the resistance switching of tetrahedral amorphous carbon (ta-C) films. Both unimplanted and implanted films show resistive switching, with a characteristic threshold voltage required to switch the films from the high-resistance to the low-resistance state. The switching voltages for the unimplanted films are between 7 and 10 V for ta-C films of thickness 15 to 40 nm. These are significantly reduced upon implantation by up to 60% when using an implantation dose ~3 × 1015 cm−2. We attribute this to increased sp2 bonding and clustering in the implanted films. This demonstrates the importance of sp2 clustering for resistive-switching in sp3-rich ta-C films.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 8,
  "authors": [
    {
      "name": "V.K. Nagareddy"
    },
    {
      "name": "A.K. Ott"
    },
    {
      "name": "C. Dou"
    },
    {
      "name": "T. Tsvetkova"
    },
    {
      "name": "M. Sandulov"
    },
    {
      "name": "M.F. Craciun"
    },
    {
      "name": "A.C. Ferrari"
    },
    {
      "name": "C.D. Wright"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/4eya97nwbsj1x.bib",
  "cited_by": 8,
  "doi": "10.1016/j.diamond.2018.05.005",
  "fulltext_url": null,
  "id": "4eya97nwbsj1x",
  "issns": [
    "0925-9635"
  ],
  "landing_url": "https://hal.science/hal-04650124v1",
  "language": "en",
  "licence": "CC-BY",
  "licence_label": "CC BY",
  "licence_source": "journal",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.phys"
    ],
    [
      "hal",
      "1.phys.cond"
    ],
    [
      "openalex",
      "2208|Advanced Memory and Neural Computing"
    ]
  ],
  "openalex": "W2800504187",
  "pdf_url": "https://www.sciencedirect.com/science/article/pii/S092596351730609X/pdf",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-01",
  "publisher": "Elsevier",
  "ris": "https://research.draconitic.com/paper/4eya97nwbsj1x.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:21Z",
      "native_id": "hal-04650124",
      "source": "hal",
      "url": "https://hal.science/hal-04650124v1"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "hal:1.phys.cond",
      "subfield": "condensed-matter"
    }
  ],
  "title": "The effect of nitrogen implantation on resistive switching of tetrahedral amorphous carbon films",
  "title_text": "The effect of nitrogen implantation on resistive switching of tetrahedral amorphous carbon films",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:21Z",
  "url": "https://research.draconitic.com/paper/4eya97nwbsj1x",
  "venue": "Diamond and Related Materials",
  "versions": []
}