{
  "abstract": "Amorphous boron nitride (\\textrm{$α$}-BN) is a promising ultrathin barrier for nanoelectronics, yet the atomistic mechanisms governing its chemical stability remain poorly understood. Here, we investigate the structure-property relationship that dictates the oxidation of \\textrm{$α$}-BN using a combination of machine-learning molecular dynamics simulations and angle-resolved X-ray photoelectron spectroscopy. The simulations reveal that the film structure, controlled by synthesis conditions, is the critical factor determining oxidation resistance. Dense, chemically ordered networks with a high fraction of B-N bonds effectively resist oxidation by confining it to the surface, whereas porous, defect-rich structures with abundant homonuclear B-B and N-N bonds permit oxygen penetration and undergo extensive bulk degradation. These computational findings are consistent with experimental trends observed in \\textrm{$α$}-BN films grown by chemical vapour deposition. XPS analysis shows that a film grown at a higher temperature develops a more ordered structure with a B/N ratio nearer to stoichiometric and exhibits superior resistance to surface oxidation compared to its more defective, lower-temperature counterpart. Together, these results demonstrate that the oxidation resistance of \\textrm{$α$}-BN is a tunable property directly linked to its atomic-scale morphology, providing a clear framework for engineering chemically robust dielectric barriers for future nanoelectronic applications.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2510.10326",
  "author_total": 7,
  "authors": [
    {
      "name": "Onurcan Kaya"
    },
    {
      "name": "Qiushi Deng"
    },
    {
      "name": "Thomas Souvignet"
    },
    {
      "name": "Catherine Marichy"
    },
    {
      "name": "Catherine Journet"
    },
    {
      "name": "Ivan Cole"
    },
    {
      "name": "Stephan Roche"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/4mjyshah94fgy.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2510.10326",
  "fulltext_url": null,
  "id": "4mjyshah94fgy",
  "issns": [],
  "landing_url": "https://hal.science/hal-05842550v1",
  "language": "en",
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.chim"
    ],
    [
      "hal",
      "1.chim.inor"
    ],
    [
      "hal",
      "1.chim.mate"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://hal.science/hal-05842550/document",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-28",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/4mjyshah94fgy.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:18:02Z",
      "native_id": "hal-05842550",
      "source": "hal",
      "url": "https://hal.science/hal-05842550v1"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "hal:1.chim.inor",
      "subfield": "inorganic"
    },
    {
      "field": "chemistry",
      "origin": "hal:1.chim.mate",
      "subfield": "materials-polymers"
    }
  ],
  "title": "Atomic-Scale Origins of Oxidation Resistance in Amorphous Boron Nitride",
  "title_text": "Atomic-Scale Origins of Oxidation Resistance in Amorphous Boron Nitride",
  "type": "preprint",
  "updated_at": "2026-10-30T12:18:02Z",
  "url": "https://research.draconitic.com/paper/4mjyshah94fgy",
  "venue": "HAL",
  "versions": []
}