{
  "abstract": "Controlling ferroelectric phase symmetry through strain engineering is crucial for tailoring polarization topology and functional properties in oxide-based devices. Here, we show that a thin conductive buffer layer can override substrate-induced strain in BaTiO$_3$ (BTO) films on MgO. Although the lattice parameter of MgO(001) would be expected to induce tensile misfit strain, in 500~nm BaTiO$_3$ films the thermal-expansion mismatch dominates, resulting in effective compressive stress upon cooling. Inserting a 50-nm La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) buffer layer reverses the effective strain state from compressive to tensile. Using temperature-dependent polarized Raman spectroscopy, X-ray diffraction, and piezoresponse force microscopy, we reveal an unconventional phase sequence upon cooling: paraelectric $\\rightarrow$ orthorhombic ($\\textit{aa}$-phase, $\\sim$407 K) $\\rightarrow$ monoclinic ($\\textit{r}$-phase, $\\sim$300-345 K), characterized in-plane and tilted polarization components. The LSMO layer not only serves as a bottom electrode but also modifies the strain state, while interfacial charge redistribution induces a built-in electric field, evidenced by self-polarization and asymmetric PFM hysteresis. These findings highlight the critical role of conductive buffer layers in controlling ferroelectric symmetry and enabling oxide heterostructures with tailored polarization textures for low-power spintronics, tunable microwave devices, and neuromorphic computing.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.16766",
  "author_total": 7,
  "authors": [
    {
      "name": "A. S. Mikheykin"
    },
    {
      "name": "N. V. Lyanguzov"
    },
    {
      "name": "A. S. Konstantinov"
    },
    {
      "name": "V. B. Shirokov"
    },
    {
      "name": "E. D. Linnik"
    },
    {
      "name": "T. Bondar"
    },
    {
      "name": "A. G. Razumnaya"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/4rjmcpaghhq15.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.16766",
  "fulltext_url": null,
  "id": "4rjmcpaghhq15",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.16766",
  "language": null,
  "licence": "CC-BY-NC-ND-4.0",
  "licence_label": "CC BY-NC-ND 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by-nc-nd/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2610.16766",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-12",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/4rjmcpaghhq15.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:29:06Z",
      "native_id": "2610.16766",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.16766"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Engineering Ferroelectric Phases in BaTiO$_3$ Films via Buffer-Layer Induced Misfit Strain Reversal",
  "title_text": "Engineering Ferroelectric Phases in BaTiO_3 Films via Buffer-Layer Induced Misfit Strain Reversal",
  "type": "preprint",
  "updated_at": "2026-10-30T12:29:06Z",
  "url": "https://research.draconitic.com/paper/4rjmcpaghhq15",
  "venue": "arXiv",
  "versions": []
}