{
  "abstract": "Remote epitaxy of the corundum phase α-Ga 2 O 3 is demonstrated through a domain-free, transfer-free monolayer of MoS 2 template synthesized on sapphire. Despite the intrinsic nonidealities of MoS 2 —specifically its thickness and polar bonding characteristics—for remote epitaxy, single-crystalline α-Ga 2 O 3 films are epitaxially grown on polycrystalline MoS 2 with crystallographic fidelity comparable to those grown directly on bare sapphire. This observation substantiates that the substrate lattice potential can still be effectively transmitted through the MoS 2 layer, facilitating epitaxial registry at the growth front. The resulting α-Ga 2 O 3 films exhibit crystal quality and surface morphology on par with those grown directly on bare sapphire. Moreover, a centimeter-scale, crack-free α-Ga 2 O 3 membrane was successfully exfoliated using a Ni stressor, underscoring the mechanical compatibility and scalability of the remote epitaxial process. Structural disordering observed with more-than-bilayer MoS 2 further corroborates the remote epitaxy mechanism. First-principles calculations reveal that interfacial interactions between the bottom S atoms of MoS 2 and the Al atoms of sapphire induce spatially modulated charge distributions on the MoS 2 surface, creating energetically favorable adsorption sites for Ga species. Collectively, these findings establish a mechanistic framework for charge-mediated remote epitaxy across polar interfaces and expand the design space for heterogeneous integration of transferable wide bandgap Ga 2 O 3 membranes in next-generation power electronics and optoelectronic devices.",
  "abstract_shown": true,
  "affiliations": [
    "School of Materials Science and Engineering, Kyungpook National University, Daegu, Republic of Korea 41566.",
    "Department of Physics and Astronomy, Seoul National University, Seoul, Republic of Korea 08826.",
    "School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, Republic of Korea 41566.",
    "KNU Advanced Material Research Institute, Kyungpook National University, Daegu, Republic of Korea 41566.",
    "Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea 03722."
  ],
  "article_type": null,
  "arxiv": null,
  "author_total": 12,
  "authors": [
    {
      "affs": [
        0
      ],
      "name": "Gyeong Ryul Lee",
      "orcid": "0009-0008-0676-5561"
    },
    {
      "affs": [
        0
      ],
      "name": "Dong-Gwan Kim",
      "orcid": "0009-0005-0220-9152"
    },
    {
      "affs": [
        1
      ],
      "name": "Wonwoo Suh",
      "orcid": "0009-0009-1092-901X"
    },
    {
      "affs": [
        0
      ],
      "name": "Yoonho Choi",
      "orcid": "0009-0004-8105-9289"
    },
    {
      "affs": [
        2
      ],
      "name": "Donghan Kim",
      "orcid": "0009-0000-4393-1823"
    },
    {
      "affs": [
        0,
        3
      ],
      "name": "Mohammad M. Afandi",
      "orcid": "0000-0001-7107-5614"
    },
    {
      "affs": [
        1
      ],
      "name": "Juhui Oh",
      "orcid": "0009-0006-8389-8849"
    },
    {
      "affs": [
        2
      ],
      "name": "Hongsik Park",
      "orcid": "0000-0003-2582-2230"
    },
    {
      "affs": [
        1
      ],
      "name": "Celesta S. Chang",
      "orcid": "0000-0001-7623-950X"
    },
    {
      "affs": [
        4
      ],
      "name": "Hyun S. Kum",
      "orcid": "0000-0002-8009-569X"
    },
    {
      "affs": [
        0,
        3
      ],
      "name": "Taehoon Lee",
      "orcid": "0000-0001-5553-5123"
    },
    {
      "affs": [
        0,
        3
      ],
      "name": "Roy B. Chung",
      "orcid": "0000-0002-1599-5034"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/4s6verz9fpy41.bib",
  "cited_by": 0,
  "doi": "10.1126/sciadv.aee9510",
  "fulltext_url": null,
  "id": "4s6verz9fpy41",
  "issns": [
    "2375-2548"
  ],
  "landing_url": "https://www.science.org/doi/10.1126/sciadv.aee9510",
  "language": null,
  "licence": "CC-BY",
  "licence_label": "CC BY",
  "licence_source": "journal",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "openalex",
      "2504|Ga2O3 and related materials"
    ]
  ],
  "openalex": "W7222764650",
  "pdf_url": null,
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-16",
  "publisher": "American Association for the Advancement of Science (AAAS)",
  "ris": "https://research.draconitic.com/paper/4s6verz9fpy41.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:41Z",
      "native_id": "10.1126/sciadv.aee9510",
      "source": "crossref",
      "url": "https://www.science.org/doi/10.1126/sciadv.aee9510"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "openalex:2504|Ga2O3 and related materials",
      "subfield": "materials-polymers"
    }
  ],
  "title": "Charge-mediated remote epitaxy of Ga ₂ O ₃ via MoS ₂",
  "title_text": "Charge-mediated remote epitaxy of Ga ₂ O ₃ via MoS ₂",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:41Z",
  "url": "https://research.draconitic.com/paper/4s6verz9fpy41",
  "venue": "Science Advances",
  "versions": []
}