{
  "abstract": "Tellurium nanowires (TeNWs), a typical p-type semiconductor, have attracted significant attention in field-effect transistors (FETs) due to their narrow bandgap and high carrier mobility properties. However, fabricating large-area electronic devices with uniform performance remains a major challenge. In this study, we report a facile solution-shearing self-assembling strategy for fabricating TeNW-FETs with high-performance and uniformity. The solution-shearing process occurs at the interface during relative motion between the substrate and TeNW dispersion, enabling the TeNWs to reorient and adhere to the substrate, forming a uniform nanowire network. The transfer characteristics of TeNW-FETs reveal highly uniform electrical performance, and FET performance is strongly modulated by dispersion concentrations. Moreover, we investigated the impact of the solution-shearing direction on the device performance. The effective field-effect mobility of FETs with channels perpendicular to the substrate movement direction was approximately 12.1% lower than that of FETs with channels parallel to the movement direction. To further demonstrate scalability, we fabricated transistor arrays containing 324 individual FETs on a 4-inch Si/SiO2 wafer, achieving 100% functional device yield and good performance uniformity. The devices exhibited an average ION/OFF ratio of 6.9 × 102, mobility (μeff) of 24.3 cm2 V−1 s−1, subthreshold swing (SS) of 7.9 V dec−1 and threshold voltage (VTH) of 12.0 V.",
  "abstract_shown": true,
  "affiliations": [
    "School of Advanced Materials Science and Engineering, , Suwon 16419, Republic of Korea;",
    "Department of Smart Fab. Technology, , Suwon 16419, Republic of Korea; (M.P.); (Y.T.); (H.-D.L.); (J.-W.K.)",
    "College of Engineering, , Ningbo 315200, China"
  ],
  "article_type": "research article",
  "arxiv": null,
  "author_total": 7,
  "authors": [
    {
      "affs": [
        0
      ],
      "name": "Hao Yang"
    },
    {
      "affs": [
        1
      ],
      "name": "Mose Park"
    },
    {
      "affs": [
        1
      ],
      "name": "Yanjin Tang"
    },
    {
      "affs": [
        1
      ],
      "name": "Hyun-Dong Lee"
    },
    {
      "affs": [
        1
      ],
      "name": "Ji-Won Kang"
    },
    {
      "affs": [
        2
      ],
      "name": "Zhiyi Lyu"
    },
    {
      "affs": [
        0
      ],
      "name": "Hoo-Jeong Lee"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/4sx0qk4drff69.bib",
  "cited_by": 0,
  "doi": "10.3390/nano16191251",
  "fulltext_url": "https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13667251/?tool=EBI",
  "id": "4sx0qk4drff69",
  "issns": [
    "2079-4991"
  ],
  "landing_url": "https://europepmc.org/article/PMC/PMC13667251",
  "language": "eng",
  "licence": "CC-BY",
  "licence_label": "CC BY",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "openalex",
      "2204|Nanowire Synthesis and Applications"
    ]
  ],
  "openalex": "W7220372691",
  "pdf_url": "https://www.ncbi.nlm.nih.gov/pmc/articles/PMC13667251/pdf/?tool=EBI",
  "pmcid": "PMC13667251",
  "pmid": null,
  "published": "2026-10-01",
  "publisher": "MDPI AG",
  "ris": "https://research.draconitic.com/paper/4sx0qk4drff69.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:35Z",
      "native_id": "PMC:PMC13667251",
      "source": "europepmc",
      "url": "https://europepmc.org/article/PMC/PMC13667251"
    },
    {
      "first_seen": "2026-10-30T12:18:45Z",
      "native_id": "10.3390/nano16191251",
      "source": "crossref",
      "url": "https://www.mdpi.com/2079-4991/16/19/1251"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "issn:2079-4991",
      "subfield": "materials-polymers"
    }
  ],
  "title": "Solution-Shearing Self-Assembly of Hydrothermally Synthesized Tellurium Nanowires for Fabricating Field-Effect Transistors with Wafer-Scale Uniformity",
  "title_text": "Solution-Shearing Self-Assembly of Hydrothermally Synthesized Tellurium Nanowires for Fabricating Field-Effect Transistors with Wafer-Scale Uniformity",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:18:45Z",
  "url": "https://research.draconitic.com/paper/4sx0qk4drff69",
  "venue": "Nanomaterials (Basel, Switzerland)",
  "versions": []
}