{
  "abstract": "Discovering antiferromagnetic materials with a sizable colossal magnetoresistance (CMR) effect and precisely tuning their responses remain significant challenges in materials science. This work reports the synthesis, phase transitions, and magnetotransport properties of the narrow-gap Zintl arsenide Eu$_2$CdAs$_2$. The compound undergoes antiferromagnetic ordering at $T_\\mathrm{N} = 9$ K and exhibits semiconducting behavior with a low-temperature activation energy of 3.2 meV, achieving a large CMR effect of $-10^4\\%$ at 9 T. Below $T_\\mathrm{N}$, a distinct butterfly-shaped magnetoresistance hysteresis emerges without any macroscopic ferromagnetic order, revealing a transport anomaly likely dictated by AFM domain dynamics and/or the formation and percolation of localized magnetic polarons. Furthermore, a systematic survey of reported Eu-based Zintl phases uncovers a nearly exponential scaling trend between the maximum CMR magnitude and the low-temperature activation energy. This correlation demonstrates that bandgap engineering serves as an effective strategy for tailoring magnetotransport, establishing Eu-containing Zintl phases as a versatile platform for exploring and manipulating CMR effects.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.39218",
  "author_total": 8,
  "authors": [
    {
      "name": "Zhiyu Zhou"
    },
    {
      "name": "Zhi-Cheng Wang"
    },
    {
      "name": "Xiyu Chen"
    },
    {
      "name": "Xin-Yu Zhao"
    },
    {
      "name": "Yaran Duan"
    },
    {
      "name": "Shiran Tao"
    },
    {
      "name": "Guang-Han Cao"
    },
    {
      "name": "Shuai Dong"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/56c4v52ezst6c.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.39218",
  "fulltext_url": null,
  "id": "56c4v52ezst6c",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.39218",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "cond-mat.str-el"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2610.39218",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-29",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/56c4v52ezst6c.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:36:23Z",
      "native_id": "2610.39218",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.39218"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Colossal magnetoresistance in narrow-gap magnetic semiconductor Eu$_2$CdAs$_2$",
  "title_text": "Colossal magnetoresistance in narrow-gap magnetic semiconductor Eu_2CdAs_2",
  "type": "preprint",
  "updated_at": "2026-11-01T12:20:45Z",
  "url": "https://research.draconitic.com/paper/56c4v52ezst6c",
  "venue": "arXiv",
  "versions": []
}