{
  "abstract": "We critically review recent experimental and theoretical advances on the valence- and structure-mismatched heteroepitaxy of III-V semiconductors on group-IV substrates. We examine key aspects including wetting behavior, atomic configurations at the hetero-interface, substrate passivation, and the stability of antiphase boundaries (APBs). By synthesizing these findings with pioneering studies, we propose a refined description of antiphase boundaries formation. Our analysis shows that hetero-interface formation is dictated by substrate terrace reconstruction, demonstrating that APBs are not generated at monoatomic step edges. This generalized III-V/IV growth framework provides new insights for the integration of III-V semiconductors on group-IV platforms and, more broadly, for valence-mismatched heteroepitaxy.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.24792",
  "author_total": 10,
  "authors": [
    {
      "name": "Charles Cornet"
    },
    {
      "name": "Sreejith Pallikkara Chandrasekharan"
    },
    {
      "name": "Audrey Gilbert"
    },
    {
      "name": "Milan Silvestre"
    },
    {
      "name": "Rozenn Bernard"
    },
    {
      "name": "Pascal Turban"
    },
    {
      "name": "Gilles Patriarche"
    },
    {
      "name": "Eric Tournie"
    },
    {
      "name": "Laurent Pedesseau"
    },
    {
      "name": "Jean-Baptiste Rodriguez"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/5apgqhtz4tqjm.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.24792",
  "fulltext_url": null,
  "id": "5apgqhtz4tqjm",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.24792",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2609.24792",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-21",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/5apgqhtz4tqjm.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:23:19Z",
      "native_id": "2609.24792",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.24792"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "III-V antiphase boundaries are not generated by Si or Ge substrate step edges",
  "title_text": "III-V antiphase boundaries are not generated by Si or Ge substrate step edges",
  "type": "preprint",
  "updated_at": "2026-10-30T12:23:19Z",
  "url": "https://research.draconitic.com/paper/5apgqhtz4tqjm",
  "venue": "arXiv",
  "versions": []
}