{
  "abstract": "Compact models of titanium-dioxide memristors used in circuit simulation commonly follow the drift formulation of Strukov \\textit{et al.} and assume a constant ionic mobility, although oxygen-vacancy migration is thermally activated and Joule self-heating is unavoidable. We present ATDM (Arrhenius Thermally Activated Drift Model), a minimal electrothermal compact model that couples the drift equation to a lumped heat balance through an Arrhenius mobility. It adds one thermal state while preserving the electrical state variable, the relation $v=iR(x)$, and the isothermal limit. The model is implemented in \\textsc{Verilog-A}, compiled with OpenVAF, and simulated as a device in \\texttt{ngspice}, where it reproduces an independent reference implementation within $0.009\\,\\%$ of the peak voltage and recovers the isothermal excursion at zero activation energy. A dimensionless formulation introduces a thermal lag $\\varepsilon$ and an effective switching number $Θ$. Across $2.5\\times10^{5}$ simulations, $Θ$ orders the state-variable excursion over the tested quasi-static domain with a robust relative scatter of $4\\,\\%$ and no fitted constant, and the $(\\varepsilon,Θ)$ regime map quantifies when the quasi-static thermal reduction remains valid. Under current drive, the stroboscopic map of the reduced model is proved to be strictly increasing, which excludes period-doubling and chaos in that reduction. Within the sampled ranges, a variance-based sensitivity analysis identifies the effective thermal resistance as a first-order contributor to self-heating, while separate capacitance sweeps show a weak influence of the thermal capacitance in the quasi-static regime. The results characterize the specified model with representative, uncalibrated parameters.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.26815",
  "author_total": 4,
  "authors": [
    {
      "name": "N. G. Koudafokê"
    },
    {
      "name": "Hilda A. Cerdeira"
    },
    {
      "name": "L. A. Hinvi"
    },
    {
      "name": "A. V. Monwanou"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/5wb0wmwydevr2.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.26815",
  "fulltext_url": null,
  "id": "5wb0wmwydevr2",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.26815",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2208|Advanced Memory and Neural Computing"
    ]
  ],
  "openalex": "W7214223694",
  "pdf_url": "https://arxiv.org/pdf/2609.26815",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-19",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/5wb0wmwydevr2.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:23:56Z",
      "native_id": "2609.26815",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.26815"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Electrothermal Compact Drift Model of TiO$_2$ Memristors: Verilog-A Implementation and Dimensionless Regime Mapping",
  "title_text": "Electrothermal Compact Drift Model of TiO_2 Memristors: Verilog-A Implementation and Dimensionless Regime Mapping",
  "type": "preprint",
  "updated_at": "2026-10-30T12:23:56Z",
  "url": "https://research.draconitic.com/paper/5wb0wmwydevr2",
  "venue": "arXiv",
  "versions": []
}