{
  "abstract": "As cubic GaN is a promising material for optoelectronic applications, its layers need to be precisely doped to realize the desired properties. While contact-based methods are established to measure the realized charge carrier density, contact-free techniques are more advantageous for this purpose. We show terahertz time-domain spectroscopy measurements of cubic GaN layers with thicknesses between 0.6 $μ$m and 2 $μ$m with doping densities in the range from $10^{18}$ cm$^{-3}$ to $10^{20}$ cm$^{-3}$. From these measurements, we determine the charge carrier densities and verify the results with time-of-flight secondary-ion mass spectrometry measurements. The results are in accordance with simulations of the doping ranges which the technique is expected to be sensitive in. In preparation for the terahertz time-domain spectroscopy measurements, we validated the layer thicknesses by Fourier-transform infrared spectroscopy measurements. With this, a wide range of doped cubic GaN samples can be addressed by optical methods. In the future, these techniques could allow for a fast and non-destructive characterization of GaN layers, right after or even during the growth process.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.40142",
  "author_total": 14,
  "authors": [
    {
      "name": "Joshua Hennig"
    },
    {
      "name": "Mario F. Zscherp"
    },
    {
      "name": "Silas A. Jentsch"
    },
    {
      "name": "Daniel Anders"
    },
    {
      "name": "Jörg Schörmann"
    },
    {
      "name": "Till Fuchs"
    },
    {
      "name": "Anja Henss"
    },
    {
      "name": "Sangam Chatterjee"
    },
    {
      "name": "Christian Röder"
    },
    {
      "name": "Franziska C. Beyer"
    },
    {
      "name": "Christina Jörg"
    },
    {
      "name": "Joachim Jonuscheit"
    },
    {
      "name": "Georg von Freymann"
    },
    {
      "name": "Daniel Molter"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/615ebjy5ryjq6.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.40142",
  "fulltext_url": null,
  "id": "615ebjy5ryjq6",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.40142",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "physics.optics"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2610.40142",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-29",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/615ebjy5ryjq6.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:36:28Z",
      "native_id": "2610.40142",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.40142"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.optics",
      "subfield": "optics-photonics"
    }
  ],
  "title": "Contact-free charge carrier density determination of doped sub-μm thin cubic GaN layers with terahertz time-domain spectroscopy",
  "title_text": "Contact-free charge carrier density determination of doped sub-μm thin cubic GaN layers with terahertz time-domain spectroscopy",
  "type": "preprint",
  "updated_at": "2026-11-01T12:20:47Z",
  "url": "https://research.draconitic.com/paper/615ebjy5ryjq6",
  "venue": "arXiv",
  "versions": []
}