{
  "abstract": "Vanadium color centers in silicon carbide (SiC) offer telecom O-band emission, sub-microsecond optical lifetimes, and second-scale spin relaxation times, rendering them promising candidates for quantum network nodes. However, efficient photon extraction from the high-refractive-index SiC host remains challenging. Here, we introduce a silicon-on-SiC heterogeneous photonic platform in which silicon nanocavities evanescently couple to shallow vanadium dopants in commercial 4H-SiC, enabling efficient zero-phonon line (ZPL) collection under resonant excitation. In as-grown ensembles, we observe Purcell-enhanced photoluminescence with transient spectral hole burning linewidths of 50 MHz on microsecond timescales. In dilute implanted samples, we isolate individual vanadium centers with high-purity single photon emission and a Purcell-enhanced lifetime of 109 ns. The entire optical interface operates through a single lensed fiber, including a 905 nm repump laser that recovers the vanadium charge state with 95% efficiency. These results establish Si-on-SiC as a scalable, foundry-compatible platform for telecom-wavelength spin-photon interfaces.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.35702",
  "author_total": 9,
  "authors": [
    {
      "name": "Timothy Draher"
    },
    {
      "name": "Nolan Bitner"
    },
    {
      "name": "Vasileios Niaouris"
    },
    {
      "name": "Claire E. McDermott"
    },
    {
      "name": "David Czaplewski"
    },
    {
      "name": "Supratik Guha"
    },
    {
      "name": "David D. Awschalom"
    },
    {
      "name": "F. Joseph Heremans"
    },
    {
      "name": "Alan M. Dibos"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/643e0b2t49ffz.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.35702",
  "fulltext_url": null,
  "id": "643e0b2t49ffz",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.35702",
  "language": null,
  "licence": "CC-BY-NC-ND-4.0",
  "licence_label": "CC BY-NC-ND 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by-nc-nd/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "quant-ph"
    ],
    [
      "openalex",
      "2505|Diamond and Carbon-based Materials Research"
    ]
  ],
  "openalex": "W7214709452",
  "pdf_url": "https://arxiv.org/pdf/2609.35702",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-28",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/643e0b2t49ffz.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:25:12Z",
      "native_id": "2609.35702",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.35702"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    },
    {
      "field": "physics",
      "origin": "arxiv:quant-ph",
      "subfield": "quantum"
    }
  ],
  "title": "A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band",
  "title_text": "A Si-on-SiC Platform for Interfacing with Vanadium Dopants in the Telecom O-Band",
  "type": "preprint",
  "updated_at": "2026-10-30T12:25:12Z",
  "url": "https://research.draconitic.com/paper/643e0b2t49ffz",
  "venue": "arXiv",
  "versions": []
}