{
  "abstract": "Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial integration of $α$-MnTe thin films on Si(111) via molecular beam epitaxy and demonstrate a robust anomalous Hall effect (AHE) in this silicon-compatible altermagnetic system. Despite the absence of net bulk magnetization, the films exhibit a pronounced hysteretic Hall response, providing transport evidence consistent with finite Berry curvature generated by symmetry breaking in the thin-film geometry. High-resolution structural and spectroscopic characterization confirms phase-pure, epitaxial growth with hexagonal NiAs-type symmetry, while magnetotransport measurements reveal correlated hysteresis in both transverse and longitudinal channels with systematic temperature evolution. First-principles calculations reveal substantial uncompensated Berry curvature arising from the spin-split band structure, consistent with altermagnetic symmetry and the origin of the observed Hall response. These results establish MnTe/Si(111) as a silicon-compatible altermagnetic platform and chart a concrete pathway for embedding Berry-phase-driven functionalities into scalable semiconductor device architectures.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2605.25953",
  "author_total": 13,
  "authors": [
    {
      "name": "Rajib Sarkar"
    },
    {
      "name": "Subhransu Kumar Negi"
    },
    {
      "name": "Arindom Das"
    },
    {
      "name": "Arijit Mandal"
    },
    {
      "name": "Pankaj Bhardwaj"
    },
    {
      "name": "Sohini Guin"
    },
    {
      "name": "Aryaman Das"
    },
    {
      "name": "Naresh Shyaga"
    },
    {
      "name": "Kartick Biswas"
    },
    {
      "name": "Pavan Nukala"
    },
    {
      "name": "Laxmipriya Nanda"
    },
    {
      "name": "B. R. K. Nanda"
    },
    {
      "name": "Dhavala Suri"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/692sgwhz2vw70.bib",
  "cited_by": 1,
  "doi": "10.48550/arxiv.2605.25953",
  "fulltext_url": null,
  "id": "692sgwhz2vw70",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2605.25953",
  "language": null,
  "licence": "CC-BY-NC-SA-4.0",
  "licence_label": "CC BY-NC-SA 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by-nc-sa/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "3107|Magnetic properties of thin films"
    ]
  ],
  "openalex": "W7162426677",
  "pdf_url": "https://arxiv.org/pdf/2605.25953",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-14",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/692sgwhz2vw70.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:21:25Z",
      "native_id": "2605.25953",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2605.25953"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Berry Curvature Driven Transport in Silicon-Compatible Altermagnetic $α$-MnTe Thin Films",
  "title_text": "Berry Curvature Driven Transport in Silicon-Compatible Altermagnetic α-MnTe Thin Films",
  "type": "preprint",
  "updated_at": "2026-10-30T12:21:25Z",
  "url": "https://research.draconitic.com/paper/692sgwhz2vw70",
  "venue": "arXiv",
  "versions": []
}