{
  "abstract": "Radiofrequency (RF) magnetron sputtering is used to deposit 5000 ppmw Dy³⁺-doped selenide thin films on SiO₂ or undoped sulfide confinement layers on silicon substrates. Then, photolithography and dry etching techniques are implemented to fabricate rare-earth-doped selenide ridge waveguides. The investigation was focused on the influence of argon deposition pressure on amorphous chalcogenide thin films’ properties with special attention to luminescence. Fluorescence in short-wave and midwave infrared spectral ranges is recorded using optical excitation at 1.32 μm. The argon pressure of 1 × 10⁻² mbar gives the highest and clearest signal in the midwave infrared region. At 4.38 μm, single-mode optical propagation is efficiently observed in 5000 ppmw Dy³⁺-doped Ga5Ge20Sb10Se65 waveguides deposited on an undoped sulfide confinement layer on the silicon substrate.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": null,
  "author_total": 13,
  "authors": [
    {
      "name": "Taghrid Ghanawi"
    },
    {
      "name": "Florent Starecki"
    },
    {
      "name": "Marion Baillieul"
    },
    {
      "name": "Abdelali Hammouti"
    },
    {
      "name": "Jan Gutwirth"
    },
    {
      "name": "Jonathan Lemaitre"
    },
    {
      "name": "Albane Benardais"
    },
    {
      "name": "Thierry Pain"
    },
    {
      "name": "Stanislav Slang"
    },
    {
      "name": "Joël Charrier"
    },
    {
      "name": "Petr Nemec"
    },
    {
      "name": "Loïc Bodiou"
    },
    {
      "name": "Virginie Nazabal"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/6evfan65zq8a1.bib",
  "cited_by": 0,
  "doi": "10.1021/acsaom.5c00306",
  "fulltext_url": null,
  "id": "6evfan65zq8a1",
  "issns": [
    "2771-9855"
  ],
  "landing_url": "https://hal.science/hal-05405280v1",
  "language": "en",
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "https://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": null,
  "native_subjects": [
    [
      "hal",
      "0.chim"
    ],
    [
      "hal",
      "0.phys"
    ],
    [
      "hal",
      "1.chim.mate"
    ],
    [
      "hal",
      "1.phys.phys"
    ],
    [
      "hal",
      "2.phys.phys.phys-optics"
    ],
    [
      "openalex",
      "2208|Photonic and Optical Devices"
    ]
  ],
  "openalex": "W4415732928",
  "pdf_url": "https://hal.science/hal-05405280/document",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-04",
  "publisher": "ACS Publications",
  "ris": "https://research.draconitic.com/paper/6evfan65zq8a1.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:29Z",
      "native_id": "hal-05405280",
      "source": "hal",
      "url": "https://hal.science/hal-05405280v1"
    }
  ],
  "subjects": [
    {
      "field": "chemistry",
      "origin": "hal:1.chim.mate",
      "subfield": "materials-polymers"
    },
    {
      "field": "physics",
      "origin": "hal:2.phys.phys.phys-optics",
      "subfield": "optics-photonics"
    }
  ],
  "title": "Influence of Argon Deposition Pressure on the Mid-Infrared Luminescence of Dysprosium-Doped Ga–Ge–Sb–Se Waveguides Deposited on Different Substrates",
  "title_text": "Influence of Argon Deposition Pressure on the Mid-Infrared Luminescence of Dysprosium-Doped Ga–Ge–Sb–Se Waveguides Deposited on Different Substrates",
  "type": "peer-reviewed",
  "updated_at": "2026-10-30T12:17:29Z",
  "url": "https://research.draconitic.com/paper/6evfan65zq8a1",
  "venue": "ACS Applied Optical Materials",
  "versions": []
}