{
  "abstract": "Determining the impact of dopants in ternary III-V nanowires (NWs) is crucial for their applications in next-generation optoelectronic and photonic devices; however, the interplay between dopant species, crystal structure, and carrier dynamics in vapor-solid-grown InGaAs NWs remains underexplored. In this study, the influence of silicon (Si) and carbon (C) doping on the structural, morphological, and optical properties of catalyst-free, selective-area grown InGaAs NWs fabricated by molecular beam epitaxy is investigated. Scanning electron microscopy demonstrates that C-doping increases the NW aspect ratio by over 100% compared to undoped NWs, while a concomitant decrease in their planar defect density is observed, indicating enhanced crystal quality with C-doping. Despite their superior crystal quality, the C-doped NWs present a diminished photoluminescence intensity, due to point defects and increased surface recombination velocity. This is further supported by time-resolved photoluminescence spectroscopy, revealing accelerated non-radiative recombination in the C-doped NWs. Lastly, hot-carrier effects in these nanostructures are studied, and their signatures remain observable, albeit with reduced intensity in both Si- and C-doped NWs. This comprehensive study establishes clear correlations between doping parameters and the resulting material characteristics and carrier dynamics, offering valuable insights into the fundamental mechanisms governing the VS-grown InGaAs NWs and their implications in optoelectronic devices.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2609.19332",
  "author_total": 8,
  "authors": [
    {
      "name": "Hamidreza Esmaielpour"
    },
    {
      "name": "Leopold Rothmayer"
    },
    {
      "name": "Thomas Trinkl"
    },
    {
      "name": "Laura Niermann"
    },
    {
      "name": "Tore Niermann"
    },
    {
      "name": "Michael Lehmann"
    },
    {
      "name": "Jonathan J. Finley"
    },
    {
      "name": "Gregor Koblmüller"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/6jakvrvrs5g5a.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2609.19332",
  "fulltext_url": null,
  "id": "6jakvrvrs5g5a",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2609.19332",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ],
    [
      "openalex",
      "2204|Nanowire Synthesis and Applications"
    ]
  ],
  "openalex": "W7213597747",
  "pdf_url": "https://arxiv.org/pdf/2609.19332",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-16",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/6jakvrvrs5g5a.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:22:19Z",
      "native_id": "2609.19332",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2609.19332"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics",
  "title_text": "Si- and C-Induced Modifications in Vapor-Solid-Grown InGaAs Nanowires: From Crystal Structure to Carrier Dynamics",
  "type": "preprint",
  "updated_at": "2026-10-30T12:22:19Z",
  "url": "https://research.draconitic.com/paper/6jakvrvrs5g5a",
  "venue": "arXiv",
  "versions": []
}