{
  "abstract": "The origin of the apparent metal-insulator transition in two-dimensional electron systems remains debated. Using temperature-dependent transport and Hall measurements on industry-relevant MoS$_2$ monolayer FETs with amorphous HfO$_2$ dielectrics, we establish classical percolation as the underlying mechanism. We report two complementary signatures of disorder-driven conduction onset: a temperature-independent Hall-density collapse as a function of absolute gate voltage and a vanishing activation energy at a characteristic carrier density $n_{\\mathrm{c}}$, identified as the percolation threshold. These findings identify dielectric-interface disorder, rather than channel quality alone, as the key parameter governing device turn-on. The extracted activation barriers reach values substantially exceeding room-temperature thermal energies, indicating that disorder-driven conduction onset remains relevant well beyond cryogenic transport.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2611.06815",
  "author_total": 7,
  "authors": [
    {
      "name": "R. V. Upadya"
    },
    {
      "name": "M. Introna"
    },
    {
      "name": "X. Wu"
    },
    {
      "name": "C. J. L. de la Rosa"
    },
    {
      "name": "K. Banerjee"
    },
    {
      "name": "D. Lin"
    },
    {
      "name": "K. De Greve"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/6jjgkq7qwmgnn.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2611.06815",
  "fulltext_url": null,
  "id": "6jjgkq7qwmgnn",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2611.06815",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2611.06815",
  "pmcid": null,
  "pmid": null,
  "published": "2026-11-04",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/6jjgkq7qwmgnn.ris",
  "sources": [
    {
      "first_seen": "2026-11-05T15:20:56Z",
      "native_id": "2611.06815",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2611.06815"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Hall-Density Collapse as Direct Evidence for Percolative Conduction Onset in Monolayer MoS$_2$ Transistors",
  "title_text": "Hall-Density Collapse as Direct Evidence for Percolative Conduction Onset in Monolayer MoS_2 Transistors",
  "type": "preprint",
  "updated_at": "2026-11-09T00:20:21Z",
  "url": "https://research.draconitic.com/paper/6jjgkq7qwmgnn",
  "venue": "arXiv",
  "versions": []
}