{
  "abstract": "Epitaxial quantum dots are leading solid-state sources of quantum light, but reproducible growth on indium phosphide (InP) remains challenging because dot-formation windows are narrow and emission wavelengths are difficult to predict. Here we report a new epitaxial route for InAsP quantum dots on InP(001), in which the cooling path selects the final morphology without intentional deposition of group-III dot material. High-temperature As exposure forms a shallow near-surface InAsP layer through As-P exchange; the cooling path and continued As supply determine whether three-dimensional islands form. Surface-sensitive spectroscopy shows near-surface As enrichment, while cross-sectional STEM/EELS identifies graded, As-rich InAsP islands. The capped emitters span 1.2-1.6 micrometers, with single-photon emission observed up to 100 K. Across 20 wafers, the surface-effective exchange dose D provides a practical calibration for targeting the median emission wavelength. These results establish cooling as an active epitaxial step for telecom InAsP quantum-dot formation and wavelength control.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2611.01214",
  "author_total": 13,
  "authors": [
    {
      "name": "Yiteng Zhang"
    },
    {
      "name": "Doaa Abdelbarey"
    },
    {
      "name": "Markus Etzkorn"
    },
    {
      "name": "Zenghui Jiang"
    },
    {
      "name": "Ankita Choudhary"
    },
    {
      "name": "Andreas Schaate"
    },
    {
      "name": "Tom Fandrich"
    },
    {
      "name": "Xin Cao"
    },
    {
      "name": "Chenxi Ma"
    },
    {
      "name": "Arijit Chakraborty"
    },
    {
      "name": "Eddy Patrick Rugeramigabo"
    },
    {
      "name": "Michael Zopf"
    },
    {
      "name": "Fei Ding"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/6k57546adt8xc.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2611.01214",
  "fulltext_url": null,
  "id": "6k57546adt8xc",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2611.01214",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "quant-ph"
    ]
  ],
  "openalex": null,
  "pdf_url": "https://arxiv.org/pdf/2611.01214",
  "pmcid": null,
  "pmid": null,
  "published": "2026-11-01",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/6k57546adt8xc.ris",
  "sources": [
    {
      "first_seen": "2026-11-03T12:20:59Z",
      "native_id": "2611.01214",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2611.01214"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    },
    {
      "field": "physics",
      "origin": "arxiv:quant-ph",
      "subfield": "quantum"
    }
  ],
  "title": "Cooling-path-selected self-assembly of telecom InAsP quantum dots",
  "title_text": "Cooling-path-selected self-assembly of telecom InAsP quantum dots",
  "type": "preprint",
  "updated_at": "2026-11-05T15:20:18Z",
  "url": "https://research.draconitic.com/paper/6k57546adt8xc",
  "venue": "arXiv",
  "versions": []
}