{
  "abstract": "Gain layer doping concentration determines the electric field profile in a low gain avalanche detector (LGAD) and is therefore the primary design parameter. This work reports its influence on the charge collection and timing behavior of 4H-SiC LGADs. Two mesa-isolated devices with cold He ion implanted termination differ only in gain layer doping, $4\\times10^{17}$~$cm^{-3}$ and $5\\times10^{17}$~$cm^{-3}$, and are characterized together with a PIN diode from the same wafer using the ultraviolet transient current technique (UV-TCT). The 25\\% doping difference produces a gain difference of about two orders of magnitude at the same applied bias, representing a gain range of 3.7 to 216. Under UV-TCT excitation, the higher-doped device exhibits time-resolution minima within a gain range of about 20--80 across the investigated laser intensities, consistent with the transition from electronic-noise-dominated jitter to multiplication shot noise. The non-monotonic timing response is also observed under a $^{90}Sr$ beta source with a Si LGAD reference: the higher-doped device reaches 51.7 ps at 280 V and then degrades, while the lower-doped device requires more than 450 V. This measured gain window provides an experimental reference for further optimization of the gain-layer design.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.00824",
  "author_total": 15,
  "authors": [
    {
      "name": "Tao Yang"
    },
    {
      "name": "Ben J. Sekely"
    },
    {
      "name": "Yashas Satapathy"
    },
    {
      "name": "Abraham Tishelman-Charny"
    },
    {
      "name": "Greg Allion"
    },
    {
      "name": "Gil Atar"
    },
    {
      "name": "Philip Barletta"
    },
    {
      "name": "Gabriele Giacomini"
    },
    {
      "name": "Carl Haber"
    },
    {
      "name": "Steve Holland"
    },
    {
      "name": "John F. Muth"
    },
    {
      "name": "Spyridon Pavlidis"
    },
    {
      "name": "Chengxi Yang"
    },
    {
      "name": "Haichen Wang"
    },
    {
      "name": "Stefania Stucci"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/6nvpdyxwt4v1v.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.00824",
  "fulltext_url": null,
  "id": "6nvpdyxwt4v1v",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.00824",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "hep-ex"
    ],
    [
      "arxiv",
      "physics.ins-det"
    ],
    [
      "openalex",
      "3106|Particle Detector Development and Performance"
    ]
  ],
  "openalex": "W7216401861",
  "pdf_url": "https://arxiv.org/pdf/2610.00824",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-01",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/6nvpdyxwt4v1v.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:26:03Z",
      "native_id": "2610.00824",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.00824"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.ins-det",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:hep-ex",
      "subfield": "high-energy"
    }
  ],
  "title": "Impact of Gain Layer Doping Concentration on the Performance of 4H-SiC LGADs",
  "title_text": "Impact of Gain Layer Doping Concentration on the Performance of 4H-SiC LGADs",
  "type": "preprint",
  "updated_at": "2026-10-30T12:26:03Z",
  "url": "https://research.draconitic.com/paper/6nvpdyxwt4v1v",
  "venue": "arXiv",
  "versions": []
}