{
  "abstract": "One-dimensional transition metal dichalcogenides (TMD) nanoribbons (NRs) offer a promising route to aggressive channel-width scaling in nanoscale transistors. However, controlling their layer number, a key determinant of device performance, has remained elusive. Here, we demonstrate a chemical vapor deposition (CVD) approach for layer-by-layer growth of MoS$_2$ NRs on a low-symmetry sapphire surface. This approach enables the oriented growth of single-crystalline bilayer NRs with a 2H stacking configuration, while maintaining widths below 20 nm. Increasing the MoO$_3$ precursor supply was found to be crucial for promoting the growth of the second and subsequent layers. By controlling the growth time and precursor supply, the layer number of MoS$_2$ NRs can be increased up to four layers. This method can also be extended to the growth of vertical MoS$_2$/WS$_2$ hetero-NRs. The average carrier mobility and current density of bilayer NR field-effect transistors (FETs) are two- and three-times higher than those of monolayer counterparts, respectively, and a maximum mobility of 86.7 cm$^2$V$^{-1}$s$^{-1}$ was attained with a bilayer NR-FET. These results highlight layer number as a key parameter for optimizing NR device performance. Our thickness-controlled growth strategy provides a general route towards TMD NR-based transistors with enhanced scalability and performance.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.00987",
  "author_total": 13,
  "authors": [
    {
      "name": "Kaichi Yamamoto"
    },
    {
      "name": "Pablo Solís-Fernández"
    },
    {
      "name": "Haiming Sun"
    },
    {
      "name": "Yanlin Gao"
    },
    {
      "name": "Yeri Lee"
    },
    {
      "name": "Yushan Tseng"
    },
    {
      "name": "Aika Uchida"
    },
    {
      "name": "Masahiro Hara"
    },
    {
      "name": "Sunmin Ryu"
    },
    {
      "name": "Yung-Chang Lin"
    },
    {
      "name": "Susumu Okada"
    },
    {
      "name": "Kazu Suenaga"
    },
    {
      "name": "Hiroki Ago"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/6t7khajng6pq8.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.00987",
  "fulltext_url": null,
  "id": "6t7khajng6pq8",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.00987",
  "language": null,
  "licence": "CC-BY-4.0",
  "licence_label": "CC BY 4.0",
  "licence_source": "article",
  "licence_url": "http://creativecommons.org/licenses/by/4.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2505|2D Materials and Applications"
    ]
  ],
  "openalex": "W7215903766",
  "pdf_url": "https://arxiv.org/pdf/2610.00987",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-01",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/6t7khajng6pq8.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:26:03Z",
      "native_id": "2610.00987",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.00987"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Layer-by-layer growth of highly aligned MoS$_2$ nanoribbon arrays",
  "title_text": "Layer-by-layer growth of highly aligned MoS_2 nanoribbon arrays",
  "type": "preprint",
  "updated_at": "2026-10-30T12:26:03Z",
  "url": "https://research.draconitic.com/paper/6t7khajng6pq8",
  "venue": "arXiv",
  "versions": []
}