{
  "abstract": "Self-consistent Schrödinger-Poisson calculations are a powerful tool for predicting the behavior of layered semiconductor quantum dot devices. However, characterization of charge stability diagrams through fully simulated gate-voltage sweeps is computationally expensive. Combining a Multi-Domain Multi-Model (MDMM) approach with an automated tuning routine, we identify gate voltages associated with selected charge configurations. This small set of self-consistent simulations can be augmented with Full Configuration Interaction (FCI) energy calculations to extract charging energies, lever arms, and interdot Coulomb interactions to directly parameterize a Hubbard model for rapid charge stability diagram generation. For an Intel Tunnel Falls Si/SiGe device, we demonstrate the Hubbard model's ability to reproduce charge stability diagrams at a fraction of the computational cost in comparison to voltage bias sweeps. We further compare the simulated diagrams to experimental data and demonstrate qualitative agreement. Our result represents a step towards predictive digital twin models for semiconductor quantum dot devices. Finally, we apply this workflow towards lever arm engineering in a second device, demonstrating that the method extends to multiple architectures.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2608.28263",
  "author_total": 8,
  "authors": [
    {
      "name": "Ron Nodel"
    },
    {
      "name": "David W. Kanaar"
    },
    {
      "name": "Connor Nasseraddin"
    },
    {
      "name": "Tim J. Wilson"
    },
    {
      "name": "Hong-Wen Jiang"
    },
    {
      "name": "Jason R. Petta"
    },
    {
      "name": "Chris Anderson"
    },
    {
      "name": "Mark F. Gyure"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/6v96dj0nqx700.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2608.28263",
  "fulltext_url": null,
  "id": "6v96dj0nqx700",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2608.28263",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mes-hall"
    ],
    [
      "arxiv",
      "quant-ph"
    ],
    [
      "openalex",
      "3107|Quantum and electron transport phenomena"
    ]
  ],
  "openalex": "W7204795218",
  "pdf_url": "https://arxiv.org/pdf/2608.28263",
  "pmcid": null,
  "pmid": null,
  "published": "2026-08-28",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/6v96dj0nqx700.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:17:22Z",
      "native_id": "2608.28263",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2608.28263"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mes-hall",
      "subfield": "condensed-matter"
    },
    {
      "field": "physics",
      "origin": "arxiv:quant-ph",
      "subfield": "quantum"
    }
  ],
  "title": "Rapid Charge Stability Diagram Generation from Device-level Modeling of Semiconductor Quantum Dots",
  "title_text": "Rapid Charge Stability Diagram Generation from Device-level Modeling of Semiconductor Quantum Dots",
  "type": "preprint",
  "updated_at": "2026-10-30T12:17:22Z",
  "url": "https://research.draconitic.com/paper/6v96dj0nqx700",
  "venue": "arXiv",
  "versions": []
}