{
  "abstract": "The characterization of electron transfer through the emitting surface is of crucial importance for optimizing existing and developing new photocathodes. Here we propose and develop a method for the direct determination of the electron escape probability in high-efficiency semiconductor photocathodes. The proposed method is based on the variations in the surface photovoltage upon the injection of emitted photoelectrons back into a photocathode (``reverse injection\"), which is induced by the polarity reversal of the external electric field. We demonstrate the method on \\textit{p}-GaN(Cs,O) photocathodes with negative effective electron affinity by measuring the evolution of photoemission quantum efficiency upon the reverse injection of emitted electrons.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2607.18420",
  "author_total": 7,
  "authors": [
    {
      "name": "S. A. Rozhkov"
    },
    {
      "name": "D. A. Kustov"
    },
    {
      "name": "V. V. Bakin"
    },
    {
      "name": "V. S. Khoroshilov"
    },
    {
      "name": "V. L. Alperovich"
    },
    {
      "name": "O. E. Tereshchenko"
    },
    {
      "name": "H. E. Scheibler"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/74sz0kzseavm2.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2607.18420",
  "fulltext_url": null,
  "id": "74sz0kzseavm2",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2607.18420",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "openalex",
      "2204|Photocathodes and Microchannel Plates"
    ]
  ],
  "openalex": "W7170046958",
  "pdf_url": "https://arxiv.org/pdf/2607.18420",
  "pmcid": null,
  "pmid": null,
  "published": "2026-09-16",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/74sz0kzseavm2.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:22:01Z",
      "native_id": "2607.18420",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2607.18420"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "Electron escape probability in high-efficiency photocathodes measured by reverse-injection photovoltage",
  "title_text": "Electron escape probability in high-efficiency photocathodes measured by reverse-injection photovoltage",
  "type": "preprint",
  "updated_at": "2026-10-30T12:22:01Z",
  "url": "https://research.draconitic.com/paper/74sz0kzseavm2",
  "venue": "arXiv",
  "versions": []
}