{
  "abstract": "Micro light-emitting diodes (micro-LEDs) offer superior performance for next-generation displays, yet their scalable manufacturing is severely bottlenecked by the mass transfer process from donor to receiver substrates. The existing laser-induced forward transfer (LIFT) methods are restricted by low throughput, limited selectivity, and long reaction times. In this study, we introduce a novel defocused direct laser ablation transfer (D-DLAT) method utilizing polyimide as a dynamic release layer. Whereas most indirect laser transfer methods trigger chip release followed by passive descent toward the receiver, D-DLAT directly ablates the release layer to actively propel the small-sized chips towards the receiver via ablation shock. By optimizing the ablation profiles and scanning paths, this method achieves high-speed transfer with significantly enhanced precision and robustness. We demonstrate the successful transfer of micro-LEDs ranging from 600 $\\unicode{x03BC}$m down to 35 $\\unicode{x03BC}$m in size, with a minimum reported placement error of less than 1 $\\unicode{x03BC}$m, and a critical transfer gap of up to 50 $\\unicode{x03BC}$m. Furthermore, the D-DLAT approach enables full selectivity, facilitating complex patterned transfers and array repitching operations that are essential for full-color display integration. Our findings indicate that D-DLAT effectively overcomes the fundamental limitations of current transfer technologies, demonstrating substantial potential for the scalable and high-yield manufacturing of advanced micro-LED displays. Ultimately, D-DLAT establishes a robust paradigm for the high-speed manipulation and heterogeneous integration of micro-optoelectronic devices, extending its profound implications beyond displays to the broader landscape of advanced micro-assembly and flexible electronics.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.21839",
  "author_total": 4,
  "authors": [
    {
      "name": "Yuxuan Cao"
    },
    {
      "name": "Yulong Wang"
    },
    {
      "name": "Jürgen Brugger"
    },
    {
      "name": "Zhen Zhang"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/7a1e0pj4pz3wc.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.21839",
  "fulltext_url": null,
  "id": "7a1e0pj4pz3wc",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.21839",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cs.SY"
    ],
    [
      "arxiv",
      "eess.SY"
    ],
    [
      "arxiv",
      "physics.optics"
    ],
    [
      "openalex",
      "3104|GaN-based semiconductor devices and materials"
    ]
  ],
  "openalex": "W7222627152",
  "pdf_url": "https://arxiv.org/pdf/2610.21839",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-15",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/7a1e0pj4pz3wc.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:29:50Z",
      "native_id": "2610.21839",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.21839"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.optics",
      "subfield": "optics-photonics"
    }
  ],
  "title": "Ablation-Driven Selective Laser Direct Mass Transfer for Micro-LEDs with High Speed, Enhanced Gap Tolerance, and High Precision",
  "title_text": "Ablation-Driven Selective Laser Direct Mass Transfer for Micro-LEDs with High Speed, Enhanced Gap Tolerance, and High Precision",
  "type": "preprint",
  "updated_at": "2026-10-30T12:29:50Z",
  "url": "https://research.draconitic.com/paper/7a1e0pj4pz3wc",
  "venue": "arXiv",
  "versions": []
}