{
  "abstract": "In this work, we systematically investigate homoepitaxial $β$-Ga$_2$O$_3$ growth by halide vapor phase epitaxy (HVPE) on (010), (001), and ($\\bar{2}$01) native substrates over a broad growth parameter space, extending the growth temperature as high as 1150 $^\\circ$C. The growth kinetics exhibit strong dependence on precursor supply, temperature, reactor pressure, and Ga-source-to-substrate distance. Increasing the HCl flow from 80 to 300 sccm enhances the growth rate by up to seven-fold, while increasing the temperature from 1050 to 1150 $^\\circ$C nearly doubles the deposition rate. At 1150 $^\\circ$C, atmospheric-pressure growth yields rates more than 2.5 times higher than those at 100 Torr, while reducing the O$_2$ flow to 5 sccm further increases the growth rate to 14.3 $μ$m/h, producing films up to 42.9 $μ$m thick in 3 h. Notably, phase-pure homoepitaxial layers with good crystalline quality are obtained across all three orientations, with low rocking-curve full width at half maximum (FWHM) values of 63.4, 66.6, and 42.8 arcsec for the (010), (001), and ($\\bar{2}$01) epilayers, respectively. The surface morphology exhibits a pronounced crystallographic dependence and evolves strongly with the HVPE growth conditions. In particular, the ($\\bar{2}$01) surface develops well-defined step-and-terrace morphology with local RMS roughness as low as 0.17 nm. These results extend $β$-Ga$_2$O$_3$ HVPE homoepitaxy into a higher-temperature regime and demonstrate a broad process window for high-rate growth of thick, high-quality epilayers with strongly orientation-dependent surface evolution.",
  "abstract_shown": true,
  "affiliations": [],
  "article_type": null,
  "arxiv": "2610.01003",
  "author_total": 5,
  "authors": [
    {
      "name": "Sourav Sarker"
    },
    {
      "name": "Saleh Ahmed Khan"
    },
    {
      "name": "Ahmed Ibreljic"
    },
    {
      "name": "Pronoy Kanti Das"
    },
    {
      "name": "Anhar Bhuiyan"
    }
  ],
  "bibtex": "https://research.draconitic.com/paper/7dx8s4rkqjjvk.bib",
  "cited_by": 0,
  "doi": "10.48550/arxiv.2610.01003",
  "fulltext_url": null,
  "id": "7dx8s4rkqjjvk",
  "issns": [],
  "landing_url": "https://arxiv.org/abs/2610.01003",
  "language": null,
  "licence": "LicenseRef-arXiv-nonexclusive-1.0",
  "licence_label": "arXiv licence",
  "licence_source": "article",
  "licence_url": "http://arxiv.org/licenses/nonexclusive-distrib/1.0/",
  "metadata_licence": "CC0-1.0",
  "native_subjects": [
    [
      "arxiv",
      "cond-mat.mtrl-sci"
    ],
    [
      "arxiv",
      "physics.app-ph"
    ],
    [
      "openalex",
      "2504|Ga2O3 and related materials"
    ]
  ],
  "openalex": "W7216016928",
  "pdf_url": "https://arxiv.org/pdf/2610.01003",
  "pmcid": null,
  "pmid": null,
  "published": "2026-10-01",
  "publisher": null,
  "ris": "https://research.draconitic.com/paper/7dx8s4rkqjjvk.ris",
  "sources": [
    {
      "first_seen": "2026-10-30T12:26:03Z",
      "native_id": "2610.01003",
      "source": "arxiv",
      "url": "https://arxiv.org/abs/2610.01003"
    }
  ],
  "subjects": [
    {
      "field": "physics",
      "origin": "arxiv:physics.app-ph",
      "subfield": "applied-instrumentation"
    },
    {
      "field": "physics",
      "origin": "arxiv:cond-mat.mtrl-sci",
      "subfield": "condensed-matter"
    }
  ],
  "title": "HVPE Homoepitaxy of $β$-Ga$_2$O$_3$: High-Temperature Growth and Orientation-Dependent Surface Evolution",
  "title_text": "HVPE Homoepitaxy of β-Ga_2O_3: High-Temperature Growth and Orientation-Dependent Surface Evolution",
  "type": "preprint",
  "updated_at": "2026-10-30T12:26:03Z",
  "url": "https://research.draconitic.com/paper/7dx8s4rkqjjvk",
  "venue": "arXiv",
  "versions": []
}